Product Information

93LC76CT-I/MC

93LC76CT-I/MC electronic component of Microchip

Datasheet
Memory; EEPROM; Microwire; 1kx8/512kx16bit; 2.5÷5.5V; 3MHz; DFN8

Manufacturer: Microchip
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Price (USD)

3300: USD 0.63 ea
Line Total: USD 2079

0 - Global Stock
MOQ: 3300  Multiples: 3300
Pack Size: 3300
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3300
Multiples : 3300

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93LC76CT-I/MC
Microchip

3300 : USD 0.7388
6600 : USD 0.7319
9900 : USD 0.7249
13200 : USD 0.718
16500 : USD 0.7112
26400 : USD 0.7041
33000 : USD 0.6972
49500 : USD 0.6902
99000 : USD 0.6832

0 - WHS 2


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 3300
Multiples : 3300

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93LC76CT-I/MC
Microchip

3300 : USD 0.6289

0 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3
Multiples : 1

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93LC76CT-I/MC
Microchip

3 : USD 0.98
10 : USD 0.882
21 : USD 0.798
56 : USD 0.756

     
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93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 8K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin PE Pin Word Size Temp Ranges Packages 93AA76A 1.8-5.5 No No 8-bit I OT 93AA76B 1.8-5-5 No No 16-bit I OT 93LC76A 2.5-5.5 No No 8-bit I, E OT 93LC76B 2.5-5.5 No No 16-bit I, E OT 93C76A 4.5-5.5 No No 8-bit I, E OT 93C76B 4.5-5.5 No No 16-bit I, E OT 93AA76C 1.8-5.5 Yes Yes 8 or 16-bit I P, SN, ST, MS, MC 93LC76C 2.5-5.5 Yes Yes 8 or 16-bit I, E P, SN, ST, MS, MC 93C76C 4.5-5.5 Yes Yes 8 or 16-bit I, E P, SN, ST, MS, MC Features: Description: Low-power CMOS technology The Microchip Technology Inc. 93XX76A/B/C devices are 8K bit, low-voltage, serial Electrically Erasable ORG pin to select word size for 76C version PROMs (EEPROM). Word-selectable devices such as 1024 x 8-bit organization A devices (no ORG) the 93XX76C are dependent upon external logic levels 512 x 16-bit organization B devices (no ORG) driving the ORG pin to set word size. In the SOT-23 Program Enable pin to write-protect the entire package, the 93XX76A devices provide dedicated 8-bit array (76C version only) memory organization, while the 93XX76B devices Self-timed erase/write cycles (including provide dedicated 16-bit memory organization. A auto-erase) Program Enable (PE) pin allows the user to write-protect Automatic ERAL before WRAL the entire memory array. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile Power-on/off data protection circuitry memory applications. The 93XX Series is available in Industry standard 3-wire serial I/O standard packages including 8-lead PDIP and SOIC, Device Status signal (Ready/Busy) and advanced packaging including 8-lead MSOP, 6-lead Sequential read function SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. All 1,000,000 E/W cycles packages are Pb-free and RoHS compliant. Data retention > 200 years Package Types (not to scale) Pb-free and RoHS compliant Temperature ranges supported: SOT-23 PDIP/SOIC (OT) (P, SN) - Industrial (I) -40C to +85C CS 1 8 VCC 1 6 - Automotive (E) -40C to +125C DO VCC CLK 2 7 PE 2 5 VSS CS Pin Function Table DI 3 6 ORG 3 4 DI CLK DO 4 5 VSS Name Function CS Chip Select DFN TSSOP/MSOP (MC) (ST, MS) CLK Serial Data Clock CS 1 8 VCC 1 8 DI Serial Data Input CS VCC 7 PE CLK 2 7 CLK 2 PE DO Serial Data Output ORG 3 6 6 DI ORG DI 3 4 5 SS Ground DO VSS DO V 4 5 VSS PE Program Enable ORG Memory Configuration CC Power Supply V 2006 Microchip Technology Inc. DS21796H-page 193AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS All parameters apply over the specified Industrial (I): TA = -40C to +85C, VCC = +1.8V to 5.5V ranges unless otherwise noted. Automotive (E): TA = -40C to +125C, VCC = +2.5V to 5.5V Param. Symbol Parameter Min Typ Max Units Conditions No. IH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V D1 V VIH2 0.7 VCC VCC +1 V VCC < 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL2 0.2 V IOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOH = -400 A, VCC = 4.5V VOH2 VCC - 0.2 V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS or VCC D6 ILO Output leakage current 1 AVOUT = VSS or VCC D7 CIN, Pin capacitance (all inputs/ 7 pFVIN/VOUT = 0V (Note 1) COUT outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Write current 3 mA FCLK = 3 MHz, VCC = 5.5V 500 A FCLK = 2 MHz, VCC = 2.5V D9 ICC read Read current 1 mA FCLK = 3 MHz, VCC = 5.5V 500 A FCLK = 2 MHz, VCC = 3.0V 100 A FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current 1 A I Temp 5 A E Temp CLK = CS = 0V ORG = DI = PE = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect (Note 1) 1.5 V 93AA76A/B/C, 93LC76A/B/C 3.8 V 93C76A/B/C Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG and PE pins not available on A or B versions. 3: Ready/Busy status must be cleared from DO, see Section 3.4 Data Out (DO). DS21796H-page 2 2006 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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