APT1204R7KFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses G g D S along with exceptionally fast switching speeds inherent with Microsemi s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg TO-220 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT1204R7KFLL UNIT V Drain-Source Voltage 1200 Volts DSS I Continuous Drain Current T = 25C 3.5 D C Amps 1 I Pulsed Drain Current 14 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 135 C P D Linear Derating Factor W/C 1.08 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 3.5 AR 1 E Repetitive Avalanche Energy 10 AR mJ 4 E Single Pulse Avalanche Energy 425 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 1.75A) 4.70 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 1200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 960V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - APT1204R7KFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C V = 0V Input Capacitance 715 iss GS V = 25V C pF Output Capacitance 130 DS oss f = 1 MHz C Reverse Transfer Capacitance 36 rss Q 3 Total Gate Charge V = 10V 31 g GS V = 600V Q nC Gate-Source Charge DD 4 gs I = 3.5A 25C D Q Gate-Drain Mille) Charge 21 gd RESISTIVE SWITCHING t Turn-on Delay Time 7 d(on) V = 15V GS t Rise Time 2 r ns V = 600V DD t Turn-off Delay Time 20 d(off) I = 3.5A 25C D t R = 1.6 Fall Time 24 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 115 on V = 800V, V = 15V DD GS E Turn-off Switching Energy I = 3.5A, R = 5 23 off D G J INDUCTIVE SWITCHING 125C 6 E 135 Turn-on Switching Energy on V = 800V, V = 15V DD GS E 25 Turn-off Switching Energy I = 3.5A, R = 4.3 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 3.5 S Amps 1 I Pulsed Source Current (Body Diode) SM 14 2 V Diode Forward Voltage (V = 0V, I = -I 3.5A) Volts SD 1.3 GS S D dv dv 5 / Peak Diode Recovery / V/ns 18 dt dt Reverse Recovery Time T = 25C 250 j t ns rr di (I = -I 3.5A, / = 100A/s) S D dt T = 125C 515 j T = 25C 0.5 Reverse Recovery Charge j C Q rr di (I = -I 3.5A, / = 100A/s) T = 125C 1.1 S D dt j T = 25C 8.3 Peak Recovery Current j I Amps RRM di (I = -I 3.5A, / = 100A/s) T = 125C 11.5 j S D dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.90 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 69.39mH, R = 25, Peak I = 3.5A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 3.5A / 700A/s V 1200 T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.0 0.9 0.80 0.7 0.60 0.5 Note: 0.40 t 1 0.3 t 2 SINGLE PULSE t 0.20 1 Duty Factor D = / t 2 Peak T = P x Z + T 0.1 J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7391 Rev B 8-2006 Z , THERMAL IMPEDANCE (C/W) JC P DM