X-On Electronics has gained recognition as a prominent supplier of APT15DQ100BG rectifiers across the USA, India, Europe, Australia, and various other global locations. APT15DQ100BG rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for rectifiers, ensuring timely deliveries around the world.

APT15DQ100BG Microchip

APT15DQ100BG electronic component of Microchip
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See Product Specifications
Part No.APT15DQ100BG
Manufacturer: Microchip
Category:Rectifiers
Description: Rectifiers Fast Recovery Epitaxial Diode - DQ
Datasheet: APT15DQ100BG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.234 ea
Line Total: USD 3.23

Availability - 218
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
200 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1275
100 : USD 1.817

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Product
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the APT15DQ100BG from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT15DQ100BG and other electronic components in the Rectifiers category and beyond.

1000V 15A APT15DQ100BG APT15DQ100SG Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Ultrafast Recovery Times Low Losses Anti-Parallel Diode -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode Popular TO-247 Package Cooler Operation -Motor Controllers -Converters Low Forward Voltage Higher Reliability Systems 2 -Inverters 1 Snubber Diode Increased System Power Low Leakage Current Density PFC Avalanche Energy Rated 1 - Cathode 2 - Anode Back of Case -Cathode MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Characteristic / Test Conditions APT15DQ100 (B/S)G UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1000 Volts RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 126C, Duty Cycle = 0.5) I 15 C F(AV) I RMS Forward Current (Square wave, 50% duty) Amps 29 F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 80 J FSM E mJ Avalanche Energy (1A, 40mH) 20 AVL T ,T -55 to 175 Operating and StorageTemperature Range J STG C T 300 Lead Temperature for 10 Sec. L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 15A 2.5 3.0 F V I = 30A Forward Voltage Volts 3.06 F F I = 15A, T = 125C 1.92 F J V = 1000V 100 R I A Maximum Reverse Leakage Current RM V = 1000V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 12 T R Microsemi Website - DYNAMIC CHARACTERISTICS APT15DQ100 (B/S)G Symbol Characteristic Test Conditions MIN TYP MAXUNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 20 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 235 rr I = 15A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 185 rr V = 667V, T = 25C R C I Maximum Reverse Recovery Current - 3 - Amps RRM t Reverse Recovery Time - 300 ns rr I = 15A, di /dt = -200A/s Q F F - 810 nC Reverse Recovery Charge rr V = 667V, T = 125C R C I - 6 - Maximum Reverse Recovery Current Amps RRM t - 125 ns Reverse Recovery Time rr I = 15A, di /dt = -1000A/s F F Q - 1150 nC Reverse Recovery Charge rr V = 667V, T = 125C R C I - 19 Amps Maximum Reverse Recovery Current RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R 1.18 Junction-to-Case Thermal Resistance C/W JC 0.22 oz W Package Weight T 5.9 g 10 lbin Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 1.20 D = 0.9 1.00 0.7 0.80 0.5 0.60 Note: t 1 0.40 0.3 t 2 t 1 t 0.20 Duty Factor D = / 2 0.1 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4225 Rev D 1-2020 Z , THERMAL IMPEDANCE (C/W) JC P DM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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