X-On Electronics has gained recognition as a prominent supplier of APT15DS60BG diodes - general purpose, power, switching across the USA, India, Europe, Australia, and various other global locations. APT15DS60BG diodes - general purpose, power, switching are a product manufactured by Microchip. We provide cost-effective solutions for diodes - general purpose, power, switching, ensuring timely deliveries around the world.

APT15DS60BG

APT15DS60BG electronic component of Microchip
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See Product Specifications
Part No.APT15DS60BG
Manufacturer: Microchip
Category:Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recovery Epitaxial Diode - DS
Datasheet: APT15DS60BG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.1446 ea
Line Total: USD 10.14

Availability - 67
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
67 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 9.8325
100 : USD 8.4985

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Technology
Semiconductor Structure
Features Of Semiconductor Devices
Reverse Recovery Time
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We proudly offer the APT15DS60BG Diodes - General Purpose, Power, Switching at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the APT15DS60BG Diodes - General Purpose, Power, Switching.

TO-247 12 3 1 - Cathode 2 D PAK 2 - Anode 1 APT15DS60BG 600V 13A APT15DS60SG 600V 13A 1 2 1 *G Denotes RoHS Compliant, Pb Free Terminal Finish. 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply Soft Recovery Characteristics Low Noise Switching -Inverters Free Wheeling Diode Popular TO-247 Package or Cooler Operation -Motor Controllers 3 Surface Mount D PAK Package -Converters Low Forward Voltage Higher Reliability Systems Snubber Diode Uninterruptible Power Supply (UPS) High Blocking Voltage Increased System Power Induction Heating Density High Speed Rectifiers Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Characteristic / Test Conditions APT15DS60B SG UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 600 Volts RRM V Maximum Working Peak Reverse Voltage RWM I (AV) Maximum Average Forward Current (T = 77C, Duty Cycle = 0.5) 13 F C I (RMS) RMS Forward Current (Square wave, 50% duty) 17 Amps F I Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) 110 FSM J T ,T Operating and StorageTemperature Range -55 to 150 J STG C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 15A 3.2 4.0 F V I = 30A Forward Voltage 4.2 Volts F F I = 15A, T = 125C 2.4 F J V = 600V 150 R I Maximum Reverse Leakage Current A RM V = 600V, T = 125C 500 R J C 24 pF Junction Capacitance, V = 200V T R APT Website - DYNAMIC CHARACTERISTICS APT15DS60B SG Symbol Characteristic Test Conditions MIN TYP MAX UNIT t Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C rr - 13 F F R J ns t Reverse Recovery Time rr -14 I = 15A, di /dt = -200A/s F F Q Reverse Recovery Charge nC rr -12 V = 400V, T = 25C R C I Maximum Reverse Recovery Current Amps RRM - 1.5 - t Reverse Recovery Time ns rr -31 I = 15A, di /dt = -200A/s F F Q Reverse Recovery Charge rr nC -85 V = 400V, T = 125C R C I Maximum Reverse Recovery Current Amps RRM - 4.7 - t Reverse Recovery Time ns rr -20 I = 15A, di /dt = -1000A/s F F Q Reverse Recovery Charge nC rr - 160 V = 400V, T = 125C R C I Maximum Reverse Recovery Current Amps RRM -18 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance 1.5 JC C/W R Junction-to-Ambient Thermal Resistance 40 JA 0.22 oz W Package Weight T 5.9 g 10 lbin Torque Maximum Mounting Torque 1.1 Nm APT Reserves the right to change, without notice, the specifications and information contained herein. 1.60 1.40 0.9 1.20 0.7 1.00 0.80 0.5 Note: 0.60 t 1 0.3 0.40 t 2 t 1 Duty Factor D = / t 0.20 0.1 SINGLE PULSE 2 Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T ( C) T ( C) J C Z are the external thermal EXT 0.355 0.854 0.291 impedances: Case to sink, Dissipated Power sink to ambient, etc. Set to (Watts) zero when modeling only 0.00229 0.0311 0.444 the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-3006 Rev C 2-2007 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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