New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2x30DQ120J APT2x31DQ120J APT2x31DQ120J 1200V 30AUL Recognize file E145592 ISOTOP APT2x30DQ120J 1200V 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode -Motor Controllers Popular SOT-227 Package Cooler Operation -Converters Higher Reliability Systems Snubber Diode Low Forward Voltage Increased System Power Uninterruptible Power Supply (UPS) High Blocking Voltage Density Induction Heating Low Leakage Current High Speed Rectiers Avalanche Energy Rated MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Characteristic / Test Conditions APT2x31 30DQ120J Symbol UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1200 Volts RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 89C, Duty Cycle = 0.5) I 30 C F(AV) I RMS Forward Current (Square wave, 50% duty) 39 Amps F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 210 J FSM E Avalanche Energy (1A, 40mH) 20 mJ AVL T ,T -55 to 175 C Operating and StorageTemperature Range J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 30A 2.6 3.1 F I = 60A V Forward Voltage Volts 3.25 F F I = 30A, T = 125C 1.8 F J V = 1200V 100 R I Maximum Reverse Leakage Current A RM V = 1200V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 36 T R Microsemi Website - New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2x31 30DQ120J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 25 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 300 rr I = 30A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 360 rr V = 800V, T = 25C R C I Maximum Reverse Recovery Current - 4 - Amps RRM t Reverse Recovery Time - 380 ns rr I = 30A, di /dt = -200A/s Q F F - 1700 nC Reverse Recovery Charge rr V = 800V, T = 125C R C I - 8 - Maximum Reverse Recovery Current Amps RRM t Reverse Recovery Time - 160 ns rr I = 30A, di /dt = -1000A/s F F Q Reverse Recovery Charge - 2550 nC rr V = 800V, T = 125C R C I - 28 Maximum Reverse Recovery Current Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R 1.1 C/W Junction-to-Case Thermal Resistance JC V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts Isolation 2500 oz 1.03 W Package Weight T g 29.2 lbin 10 Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the specications and information contained herein. 1.20 D = 0.9 1.00 0.7 0.80 0.60 0.5 Note: t 1 0.40 0.3 t 2 t 0.20 1 t Duty Factor D = / 2 0.1 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T (C) T (C) J C Z are the external thermal EXT 0.219 0.468 0.341 impedances: Case to sink, Dissipated Power sink to ambient, etc. Set to (Watts) zero when modeling only 0.00306 0.0463 0.267 the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-4221 Rev D 7-2006 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM