X-On Electronics has gained recognition as a prominent supplier of APT30DQ60BHBG DIODES - GENERAL PURPOSE, POWER, SWITCHING across the USA, India, Europe, Australia, and various other global locations. APT30DQ60BHBG DIODES - GENERAL PURPOSE, POWER, SWITCHING are a product manufactured by Microchip. We provide cost-effective solutions for DIODES - GENERAL PURPOSE, POWER, SWITCHING, ensuring timely deliveries around the world.

APT30DQ60BHBG Microchip

APT30DQ60BHBG electronic component of Microchip
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Part No.APT30DQ60BHBG
Manufacturer: Microchip
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recovery Epitaxial Diode - DQ
Datasheet: APT30DQ60BHBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.8275 ea
Line Total: USD 8.83

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 5.8995
100 : USD 5.3705

0 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 11.214
3 : USD 7.336
7 : USD 6.93

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Technology
Semiconductor Structure
Application
Features Of Semiconductor Devices
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We are delighted to provide the APT30DQ60BHBG from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT30DQ60BHBG and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

TO-247 APT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Ultrafast Recovery Times Low Losses Anti-Parallel Diode -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching 1 Free Wheeling Diode 2 Popular TO-247 Package or Cooler Operation 3 -Motor Controllers 3 Surface Mount D PAK Package -Converters Low Forward Voltage Higher Reliability Systems -Inverters Snubber Diode Low Leakage Current Increased System Power 1 3 Density PFC Avalanche Energy Rated 2 RoHS Compliant 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 MAXIMUM RATINGS All Ratings per diode: T = 25C unless otherwise speci ed. C Symbol Characteristic / Test Conditions APT30DQ60BHB(G) UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 600 Volts RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 67C, Duty Cycle = 0.5) I 30 C F(AV) I RMS Forward Current (Square wave, 50% duty) Amps 51 F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 320 J FSM E mJ Avalanche Energy (1A, 40mH) 20 AVL T ,T -55 to 175 Operating and StorageTemperature Range J STG C T 300 Lead Temperature for 10 Sec. L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I = 30A 2.0 2.4 F V I = 60A Forward Voltage Volts 2.4 F F I = 30A, T = 125C 1.7 F J V = 600V 25 R I A Maximum Reverse Leakage Current RM V = 600V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 36 T R 052-6321 Rev A 1-2009DYNAMIC CHARACTERISTICS APT30DQ60BHB(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 23 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 30 rr I = 30A, di /dt = -200A/s Q F F nC - 55 Reverse Recovery Charge rr V = 400V, T = 25C R C I - 3 - Amps Maximum Reverse Recovery Current RRM t - 175 ns Reverse Recovery Time rr I = 30A, di /dt = -200A/s Q F F - 485 nC rr Reverse Recovery Charge V = 400V, T = 125C R C I - 6 - Maximum Reverse Recovery Current Amps RRM t - 75 ns Reverse Recovery Time rr I = 30A, di /dt = -1000A/s F F Q - 855 nC Reverse Recovery Charge rr V = 400V, T = 125C R C I - 22 Amps Maximum Reverse Recovery Current RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R 1.5 Junction-to-Case Thermal Resistance C/W JC 0.22 oz W Package Weight T 5.9 g 10 lbin Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 1.6 1.4 1.2 1.0 0.8 Note: 0.6 t 1 0.4 t 2 t 1 t Duty Factor D = / 0.2 2 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 0.1 1 10 10 10 10 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T (C) T (C) J C Z are the external thermal 0.481 EXT 1.019 impedances: Case to sink, Dissipated Power sink to ambient, etc. Set to (Watts) zero when modeling only 0.0023 0.0531 the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 052-6321 Rev A 1-2009 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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