APTGF75H120TG

APTGF75H120TG V = 1200V CES Full - Bridge I = 75A Tc = 80C C NPT IGBT Power Module Application Welding converters VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q3 Q1 Motor control G3 G1 Features Non Punch Through (NPT) Fast IGBT OUT1 E1 OUT2 E3 - Low voltage drop - Low tail current Q2 Q4 - Switching frequency up to 50 kHz - Soft recovery parallel diodes G4 G2 - Low diode VF - Low leakage current E2 E4 - RBSOA and SCSOA rated Kelvin emitter for easy drive NTC1 NTC2 0/VBUS Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Easy paralleling due to positive T of V C CEsat Low profile RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 1200 V CES T = 25C 100 c I Continuous Collector Current C T = 80C A 75 c I Pulsed Collector Current T = 25C 150 CM c V Gate Emitter Voltage 20 V GE = 25C P Maximum Power Dissipation T 500 W c D RBSOA Reverse Bias Safe Operating Area T = 150C 150A 1200V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APTGF75H120TG Rev 4 October, 2012 APTGF75H120TG All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C j 250 V = 0V GE I Zero Gate Voltage Collector Current A CES V = 1200V T = 125C CE j 500 T = 25C V =15V j 3.2 3.7 GE V Collector Emitter saturation Voltage V CE(sat) I = 75A C T = 125C 3.9 j V Gate Threshold Voltage V = V , I = 2.5 mA 4.5 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 500 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 5.1 ies GE V = 25V nF C Output Capacitance CE 0.7 oes f = 1MHz C Reverse Transfer Capacitance 0.4 res V =15V, I =75A GE C Q Gate charge 0.8 C G V =600V CE Inductive Switching (25C) T Turn-on Delay Time 120 d(on) V = 15V GE T Rise Time 50 r V = 600V ns Bus T Turn-off Delay Time 310 d(off) I = 75A C T Fall Time 20 f R = 7.5 G T Turn-on Delay Time Inductive Switching (125C) 130 d(on) V = 15V GE T Rise Time 60 r V = 600V ns Bus T Turn-off Delay Time 360 d(off) I = 75A C T Fall Time 30 f R = 7.5 G V = 15V GE E Turn-on Switching Energy T = 125C 9 on j V = 600V Bus mJ I = 75A C E Turn-off Switching Energy T = 125C 4 off j R = 7.5 G V 15V V = 900V GE Bus I Short Circuit data 450 A sc t 10s T = 125C p j Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 1200 V RRM T = 25C 250 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 500 j I DC Forward Current Tc = 80C 50 A F T = 25C 2.1 j V Diode Forward Voltage I = 50A V F F T = 125C j 1.9 T = 25C 95 j t Reverse Recovery Time ns rr T = 125C 190 j I = 50A F T = 25C 4.2 j Q Reverse Recovery Charge V = 600V C R rr di/dt =1500A/s T = 125C 9 j T = 25C 1.5 j E Reverse Recovery Energy mJ r T = 125C 3 j 2-6 www.microsemi.com APTGF75H120TG Rev 4 October, 2012