APTGT50H60T3G Microchip

APTGT50H60T3G Full - Bridge V = 600V CES Trench + Field Stop IGT3 I = 50A Tc = 80C C Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT3 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 29/30 22/23 All ratings T = 25C unless otherwise specified j Absolute maximum ratings (per IGBT) Symbol Parameter Max ratings Unit V V Collector - Emitter Voltage 600 CES T = 25C C 80 I Continuous Collector Current C A T = 80C 50 C I Pulsed Collector Current T = 25C 100 CM C V Gate Emitter Voltage 20 V GE P Power Dissipation T = 25C 176 W D C T = 150C RBSOA Reverse Bias Safe Operating Area J 100A 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-6 www.microsemi.com APTGT50H60T3G Rev 3, November,2017 APTGT50H60T3G Electrical Characteristics (per IGBT) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 600V 250 A CES GE CE T = 25C 1.5 1.9 V =15V j GE V Collector Emitter Saturation Voltage V CE(sat) I = 50A C T = 150C 1.7 j V Gate Threshold Voltage V = V , I = 600A 5.0 5.8 6.5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 600 nA GES GE CE Dynamic Characteristics (per IGBT) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 3150 ies V = 0V GE C Output Capacitance 200 oes V = 25V pF CE f = 1MHz C Reverse Transfer Capacitance 95 res Inductive Switching (25C) T Turn-on Delay Time 110 d(on) V = 15V GE T Rise Time 45 r V = 300V Bus ns T Turn-off Delay Time 200 d(off) I = 50A C T Fall Time 40 f R = 8.2 G Inductive Switching (150C) T Turn-on Delay Time 120 d(on) V = 15V GE T Rise Time 50 r V = 300V ns Bus T Turn-off Delay Time 250 d(off) I = 50A C T Fall Time 60 f R = 8.2 G V = 15V GE E Turn-on Switching Energy T = 150C 0.43 mJ on j VBus = 300V I = 50A C E Turn-off Switching Energy T = 150C 1.75 mJ off j R = 8.2 G R Junction to Case Thermal Resistance 0.85 C/W thJC Reverse diode ratings and characteristics (per diode) Symbol Characteristic Test Conditions Min Typ Max Unit V Peak Repetitive Reverse Voltage 600 V RRM I Reverse Leakage Current V =600V 250 A RM R I DC Forward Current Tc = 80C 50 A F I = 50A T = 25C 1.6 2 F j V Diode Forward Voltage V F V = 0V T = 150C 1.5 GE j T = 25C 100 j t Reverse Recovery Time ns rr T = 150C 150 j IF = 50A T = 25C 2.6 j Q Reverse Recovery Charge V = 300V C rr R Tj = 150C 5.4 di/dt =1800A/s T = 25C 0.6 j E Reverse Recovery Energy mJ r T = 150C 1.2 j R Junction to Case Thermal Resistance 1.42 C/W thJC 2-6 www.microsemi.com APTGT50H60T3G Rev 3, November,2017