D1 D3 ARF1511 D1 D3 G1 G3 S1D2 G1 G3 S3D4 S3D4 S1D2 ARF1511 G2 G4 G2 G4 S2 S4 RF POWER MOSFET S2 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge con guration. It is intended for off-line 300V operation in high power scienti c, medical and, industrial RF power generator and ampli er applications up to 40 MHz. High Performance Power RF Package. Speci ed 380 Volt, 27.12 MHz Characteristics: Very High Breakdown for Improved Ruggedness. Output Power = 750 Watts. Low Thermal Resistance. Gain = 17dB (Class D) Nitride Passivated Die for Improved Reliability. RoHS Compliant MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter ARF 1511 UNIT V Drain-Source Voltage 500 Volts DSS I 20 Amps Continuous Drain Current T = 25C D C V Gate-Source Voltage 30 Volts GS P 1500 Total Device Dissipation T = 25C Watts D C T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T 300 Lead Temperature: 0.063 from Case for 10 Sec. L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV 500 Drain-Source Breakdown Voltage (V = 0V, I = 250 A) DSS GS D Volts 1 V 5 6 On State Drain Voltage (I = 10A, V = 10V) (ON) DS (ON) D GS 25 Zero Gate Voltage Drain Current (V = 500V, V = 0V) DS GS I A DSS 250 Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) DS GS C 100 I nA Gate-Source Leakage Current (V = 30V, V = 0V) GSS GS DS g 3.3 5.5 8 mhos Forward Transconductance (V = 25V, I = 10A) fs DS D TBD V RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Volts isolation 3 5 Gate Threshold Voltage (V = V , I = 50mA) Volts V (TH) DS GS D GS THERMAL CHARACTERISTICS Symbol MIN TYP MAX UNIT Characteristic (per package unless otherwise noted) R 0.10 Junction to Case JC C/W R 0.16 Junction to Sink (Use High Ef ciency Thermal Joint Compound and Planar Heat Sink Surface.) JHS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - ARF1511 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1200 1400 Input Capacitance iss V = 0V GS C pF Output Capacitance 150 200 V = 200V oss DS f = 1 MHz C Reverse Transfer Capacitance 60 90 rss t Turn-on Delay Time 7 d(on) V = 15V GS t Rise Time V = 250V 6 r DD ns I = 20A 25C t Turn-off Delay Time 20 D d(off) R = 1.6 t Fall Time G 4.4 f 2 E 10 Repetitive Avalanche Energy AR mJ E 3 450 AS Single Pule Avalanche Energy FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Ampli er Power Gain f = 40.7 MHz 13 15 dB PS V = 0V V = 380V Drain Ef ciency 75 GS DD % P = 750W out Electrical Ruggedness VSWR 6:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 Starting T = +25C, L = 2.25mH, R = 25 , Peak I = 20A j G L Microsemi reserves the right to change, without notice, the speci cations and information contained herein. D1 D3 D1 D3 .100 HAZARDOUS MATERIAL .175 WARNING G1 G3 .100 G1 G3 .075 The ceramic portion of the device 1.065 S1D2 S3D4 ARF1511 .100 between leads and mounting surface S1D2 27.05 mm is beryllium oxide, BeO. Beryllium .175 S3D4 oxide dust is toxic when inhaled. G2 G4 .100 Care must be taken during handling G2 G4 .075 and mounting to avoid damage to S2 S4 .100 this area. These devices must never 1.065 .300 .300 be thrown away with general industri- S2 S4 27.05 mm al or domestic waste. Thermal Considerations and Package Mounting: .254 The rated 1500W power dissipation is only available .045 .005 when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resis- tance between junctions and case mounting surface is 0.10C/W. When installed, an additional thermal impedance of 0.06C/W between the package base and the mounting surface is smooth and at. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A Clamp clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device ARF 1511 and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note Heat Sink 1802Mounting Instructions for Flangeless Packages 050-4927 Rev D 10-2008