WWW.Microsemi .COM HHUUMM22001100--22002200 HUM2001/HUM2020 SERIES Pin Diode High Power Stud KEY FEATURES DESCRIPTION With high isolation, low loss, and low distortion characteristics, this High Power Stud Mount Package. Microsemi Power PIN diode is perfect for the high power switching High Zero Bias Impedance Very Low Inductance and applications where size and power handling capability are critical. Capacitance. Its advantages also include the low forward bias resistance and high zero No Internal Lead Straps. bias impedance that are essential for low loss, high isolation and wide Small Mechanical Outline. bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical APPLICATIONS/BENEFITS bonds on both sides to achieve high reliability and high surge capability. MRI Applications. High Power Antenna Switching. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM ELECTRICALS ELECTRICALS HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY ELECTRICAL PARAMETERS 25C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units Diode Resistance R F= 4 MHz, If = 0.5 A 0.10 0.20 S Capacitance C C F= 1 MHz, 100 V 3.4 4.0 pF T T I Reverse Current V Rated Voltage 10 A R R Carrier Lifetime If = 10 mA/ 100 V 10 30 s Parallel Resistance R F= 10 MHz, 100 V 200 k P Forward Voltage Vf If = 0.5 A 0.85 1.0 V HUM2010, 15, 20 HUM2010, 15, 20 TYPICAL TYPICAL 1 10 16 12 0 10 8 -1 10 4 -2 0 10 -1 0 1 2 0 1 2 3 10 10 10 10 10 10 10 10 Vr (V) If (mA) HUM2010, 15, 20 TYPICAL HUM2010, 15, 20 1 TYPICAL 10 6 10 1 MHz 0 5 10 10 4 10 -1 10 3 10 -2 2 100 MHz 10 10 1 10 -3 10 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 10 Vf (V) 0 10 20 3040 5060 70 8090 100 Vr (V) Copyright 2000 Microsemi Page 2 MSCXXXX.PDF 2002-08-08 If (A) Rs 4 MHz (Ohms) Ct 1 MHz (pF) Rp (KOhms)