JAN1N6461 Microchip

JAN1N6461 electronic component of Microchip Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JAN1N6461 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. JAN1N6461 ESD Protection Diodes / TVS Diodes are a product manufactured by Microchip. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. JAN1N6461
Manufacturer: Microchip
Category: ESD Protection Diodes / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors Transient Voltage Suppressor
Datasheet: JAN1N6461 Datasheet (PDF)
Price (USD)
10: USD 12.525 ea
Line Total: USD 125.25 
Availability : 94
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
10$ 12.525
11$ 12.4625
25$ 12.4
50$ 12.3375
75$ 12.275
100$ 11.4625

Availability 94
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10
Multiples : 1
QtyUnit Price
10$ 12.525
11$ 12.4625
25$ 12.4
50$ 12.3375
75$ 12.275
100$ 11.4625

   
Manufacturer
Product Category
RoHS - XON
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Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JAN1N6461 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN1N6461 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

Image Part-Description
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1N6461 1N6468 Qualified Levels: Voidless Hermetically Sealed Unidirectional JAN, JANTX, and Available on Transient Voltage Suppressors JANTXV commercial versions Qualified per MIL-PRF-19500/551 DESCRIPTION This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak standoff voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration. Important: For the latest information, visit our website 1N6461 1N6468 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only. MARKING: Body paint and part number. POLARITY: Cathode band. TAPE & REEL option: Standard per EIA-296. Contact factory for quantities. WEIGHT: Approximately 750 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6461 e3 Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant CDS (reference JANS) Blank = commercial JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage V WM that may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse I current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an PP external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C T4-LDS-0286, Rev. 1 (4/24/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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Supertex
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VECTRON INTERNATIONAL
VECTRON INTL
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Vitesse / Microsemi
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