Product Information

JANTX1N4150-1

JANTX1N4150-1 electronic component of Microchip

Datasheet
Diodes - General Purpose, Power, Switching Signal or Computer Diode

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 1.1583 ea
Line Total: USD 8.11

548 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
1619 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 25
Multiples : 1

Stock Image

JANTX1N4150-1
Microchip

25 : USD 1.3125
250 : USD 1.2187
500 : USD 1.2075
1000 : USD 1.2012
2500 : USD 1.195
5000 : USD 1.1887
7500 : USD 1.1825
10000 : USD 1.1775

69 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

JANTX1N4150-1
Microchip

1 : USD 1.3719

548 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

JANTX1N4150-1
Microchip

1 : USD 1.2881
100 : USD 1.1819

849 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

JANTX1N4150-1
Microchip

1 : USD 1.3016

1600 - WHS 5


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 50
Multiples : 25

Stock Image

JANTX1N4150-1
Microchip

50 : USD 1.6925

548 - WHS 6


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 7
Multiples : 1

Stock Image

JANTX1N4150-1
Microchip

7 : USD 1.1799
25 : USD 1.1419
100 : USD 1.119

     
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Product Category
RoHS - XON
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FEATURES 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N4150-1 19500/231 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 C Operating Temperature: -65C to +175 C Storage Temperature: -65C to +175 C Surge Current A, sine 1uS: 4.0A Surge Current B, sine 1S: 0.5A Total Power Dissipation: 500mW Operating Current: 200mA, T = +25C to +75 C A Derating Factor: 2mA/C above T (3/8)= +75 C L D.C. Reverse Voltage (VRWM): 50V DC ELECTRICAL CHARACTERISTICS V I V F R BR Ambient I Min Max Ambient Min Max Ambient I Min Max F R (C) mA V V (C) V (dc) A A (C) A V V 25 1 .54.62 25 50 - 0.1 25 10 75 - 25 10 .66.74 150 50 - 100 25 50 .76.86 25 100 .82.92 25 200 .871.00 DESIGN DATA AC ELECTRICAL CHARACTERISTICS AT 25C Symbol Min Max Case: Hermetically sealed glass package per MIL- Capacitance 0V pF PRF-19500/231 DO-35 outline - 2.5 Lead Material: Copper clad steel T I =I =10mA, RR F R nsec - 4 Lead Finish: Tin/Lead I = 1mA. Rec Thermal Resistance (R ): 250C/W maximum JL V V I = 200mA - 5 FR F at L=.375 Thermal Impedance (Z ): 70C/W maximum T I = 200mA nsec - 10 JX FR F Marking: Alpha numeric. Polarity: Cathode end is banded. IRELAND - GORT ROAD, ENNIS, CO. CLARE PHONE: +353 65 6840044 TOLL FREE: +186 62 702434 FAX: +353 65 6822298 WWW.MICROSEMI.COM U.S.A. DOMESTIC SALES CONTACT PHONE: (617) 926 0404 TOLL FREE: 1 800 666 2999 X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Diodes - General Purpose, Power, Switching category: Click to view products by Microchip manufacturer: Other Similar products are found below : RD0306T-H BAQ33-GS18 BAV17-TR BAV19-TR 1N3611 NTE156A NTE525 NTE571 NTE574 NTE5804 NTE5806 NTE6244 1SS181-TP 1SS193,LF 1SS400CST2RA SDAA13 SHN2D02FUTW1T1G LS4151GS08 1N4449 1N456A 1N4934-E3/73 1N914B 1N914BTR RFUH20TB3S BAS 28 E6327 BAV199-TP BAW56DWQ-7-F BAW75-TAP MM230L-CAA IDW40E65D1 LL4151-GS18 053684A SMMSD4148T3G 707803H SP000010217 ACDSW4448-HF CDSZC01100-HF BAV199E6433HTMA1 BAV70M3T5G SMBT2001T1G NTE5801 NTE5800 NTE5808 NTE6240 NTE6248 DLM10C-AT1 BAS28-7 BAW56HDW-13 BAS28 TR VS- HFA04SD60STR-M3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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