X-On Electronics has gained recognition as a prominent supplier of JANTX2N6299 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. JANTX2N6299 Darlington Transistors are a product manufactured by Microchip. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

JANTX2N6299 Microchip

JANTX2N6299 electronic component of Microchip
JANTX2N6299 Microchip
JANTX2N6299 Darlington Transistors
JANTX2N6299  Semiconductors

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See Product Specifications
Part No. JANTX2N6299
Manufacturer: Microchip
Category: Darlington Transistors
Description: Darlington Transistors PNP Darlington Transistor
Datasheet: JANTX2N6299 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7: USD 40.508 ea
Line Total: USD 283.56 
Availability - 356
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
356
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 7
Multiples : 1
7 : USD 40.508
100 : USD 35.6625

   
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We are delighted to provide the JANTX2N6299 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N6299 and other electronic components in the Darlington Transistors category and beyond.

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2N6298 and 2N6299 Qualified Levels: PNP Darlington Power Silicon Transistor JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/540 versions DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. TO-213AA (TO-66) Package Important: For the latest information, visit our website 2N6298 and 2N6299 MECHANICAL and PACKAGING CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: MSC, part number, date code, polarity symbol WEIGHT: Approximately 5.7 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6298 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Base current: The value of the dc current into the base terminal. B I Collector current: The value of the dc current into the collector terminal. C I Emitter current: The value of the dc current into the emitter terminal. E T Case temperature: The temperature measured at a specified location on the case of a device. C V Collector-base voltage: The dc voltage between the collector and the base. CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. V Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. CC Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the V CEO base terminal is open-circuited. V Emitter-base voltage: The dc voltage between the emitter and the base. EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the V EBO collector terminal open-circuited. T4-LDS-0310, Rev. 1 (8/9/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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