Product Information

MSMCJ60Ae3

MSMCJ60Ae3 electronic component of Microchip

Datasheet
ESD Suppressors / TVS Diodes Bi-Directional TVS

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9867 ea
Line Total: USD 1.99

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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MSMCJ60Ae3
Microchip

1 : USD 1.9867
10 : USD 1.7673
100 : USD 1.7453
500 : USD 1.6606
1000 : USD 1.6274

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 400
Multiples : 400

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MSMCJ60Ae3
Microchip

400 : USD 2.8497

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4
Multiples : 4

Stock Image

MSMCJ60Ae3
Microchip

4 : USD 1.9867
10 : USD 1.7673
100 : USD 1.7557
500 : USD 1.7207

     
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RoHS - XON
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1N5610 thru 1N5613 Qualified Levels: Voidless Hermetically Sealed Unidirectional JAN, JANTX, and Available on Transient Voltage Suppressors JANTXV commercial versions Qualified per MIL-PRF-19500/434 DESCRIPTION This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppressor (TVS) designs is military qualified and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak Standoff Voltage selection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hard- glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in a surface mount MELF package configuration as a special order. Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. Important: For the latest information, visit our website 1N5610 thru 1N5613 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINATIONS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin available for commercial only. MARKING: Body painted and part number. POLARITY: Cathode band. Tape & Reel option: Standard per EIA-296. Consult factory for quantities. Weight: 1270 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5610 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant SP = Reference JANS Blank = Commercial JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition I Breakdown Current: The current used for measuring Breakdown Voltage V . (BR) (BR) I Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. D I Peak Pulse Current: The peak current during the impulse. PP P Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I . PP PP T Temperature Solder Pad: The maximum solder temperature that can be safely applied to the terminal. SP Temperature Coefficient of Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified V(BR) current temperature. V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. (BR) V Maximum clamping voltage at specified I (Peak Pulse Current) at the specified pulse conditions. C PP Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is V WM also referred to as Standoff Voltage. ELECTRICAL CHARACTERISTICS MINIMUM BREAKDOWN WORKING MAX MAXIMUM MAXIMUM MAXIMUM BREAK CURRENT PEAK STANDOFF CLAMPING PEAK PULSE TEMP. DOWN MAXIMUM dc REVERSE CURRENT VOLTAGE CURRENT COEF. TYPE VOLTAGE CURRENT VOLTAGE I V I OF V D C PP (BR) o V T = +25 C V V 10/1000 s 8/20 s 10/1000 s (BR) A WM WM V(BR) 1.0 mA I (BR) o Volts mA V (pk) A V (pk) A (pk) A (pk) % / C 1N5610 33.0 75.0 30.5 5 47.6 193 32.0 .093 1N5611 43.7 53.0 40.3 5 63.5 136 24.0 .094 1N5612 54.0 43.0 49.0 5 78.5 116 19.0 .096 1N5613 191 12.5 175 5 265 33 5.7 .100 T4-LDS-0241, Rev. 1 (112023) 2011 Microsemi Corporation Page 2 of 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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