Product Information

MSMLJ43CA

MSMLJ43CA electronic component of Microchip

Datasheet
Diode TVS Single Bi-Dir 43V 3KW 2-Pin DO-214AB

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

400: USD 1.9853 ea
Line Total: USD 794.12

0 - Global Stock
MOQ: 400  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 400
Multiples : 1

Stock Image

MSMLJ43CA
Microchip

400 : USD 1.9853
4000 : USD 1.9028
40000 : USD 1.8647

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 20
Multiples : 1

Stock Image

MSMLJ43CA
Microchip

20 : USD 2.9384
25 : USD 2.6346
50 : USD 2.5109
100 : USD 2.3296

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Termination Style
Package / Case
Packaging
Height
Length
Width
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Mounting Style
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MSMLG5.0A MSMLG170CAe3, MSMLJ5.0 MSMLJ170CAe3 Screening in Surface Mount 3000 Watt reference to Available MIL-PRF-19500 Transient Voltage Suppressor available DESCRIPTION The MSMLG(J)5.0A through MXLSMLG(J)170A series of high-reliability Transient Voltage Suppressors (TVSs) protect circuits from voltage spikes containing up to 3000 W (10/1000 s model pulse. The SMLG gull-wing design in the DO-215AB package allows for visible solder connections. The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density. Selections include unidirectional and bidirectional as well as RoHS compliant versions. These are available with a variety of upscreening options for enhanced reliability. They DO-215AB protect against the secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching environments and induced by RF radiation. Since their response time is Package virtually instantaneous, they can also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Important: For the latest information, visit our website MSMLG5.0A MSMLG170CAe3, MSMLJ5.0 MSMLJ170CAe3 MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T and T -65 to +150 C J STG Thermal Resistance Junction-to-Lead R 17.5 C/W JL (1) Thermal Resistance Junction-to-Ambient R 77.5 C/W JA Peak Pulse Power Dissipation 25 C P 3000 W PP (at 10/1000 s, see Figures 1, 2, and 3) Impulse Repetition Rate (duty factor) df 0.01 or less % t (0 volts to V min.) Unidirectional t <100 ps clamping (BR) clamping Bidirectional <5 ns Rated Average Power Dissipation T = +45 C P 6 W L M(AV) (1) T = +25 C 1.61 A (2) Maximum Forward Surge Current I 200 A (pk) FSM o Solder Temperature 10 s T 260 C SP Notes: 1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page) 2. Peak impulse of 8.3 ms half-sine wave at 25 C (unidirectional only) MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026. MARKING: Part number marked on package POLARITY: Cathode indicated by band. No cathode band on bi-directional devices TAPE & REEL option: Standard per EIA-481-B with 16 mm tape (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.25 grams See Package Dimensions on last page. PART NOMENCLATURE MX SM L G 5.0 C A e3 Reliability Level* RoHS Compliance M (controlled product) e3 = RoHS Compliant MA (Avionics grade) Blank = non-RoHS Compliant MX (reference JANTX) MXL (MX Lite) +/- 5% Tolerance Level Blank = commercial *(see High Reliability Uni/Bidirectional Up-Screened Plastic C = Bidirectional Products Portfolio) Blank = Unidirectional Surface Mount Reverse Stand-Off Voltage Package (see Electrical Characteristics table) 3000 W Power Level Gull-wing Lead Frame G = Gull-Wing J = J-Bend RF01003, Rev. C (7/30/13) 2013 Microsemi Corporation Page 2 of 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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