SM1605E3/TR13 Microchip

SM1605E3/TR13 electronic component of Microchip
SM1605E3/TR13 Microchip
SM1605E3/TR13 ESD Protection Diodes / TVS Diodes
SM1605E3/TR13  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SM1605E3/TR13 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SM1605E3/TR13 ESD Protection Diodes / TVS Diodes are a product manufactured by Microchip. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.SM1605E3/TR13
Manufacturer:Microchip
Category:ESD Protection Diodes / TVS Diodes
Description:ESD Suppressors / TVS Diodes Diode Array
Datasheet:SM1605E3/TR13 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
454: USD 0.6023 ea
Line Total: USD 273.44 
Availability : 0
  
QtyUnit Price
454$ 0.6023
461$ 0.5923
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 6
Multiples : 1
QtyUnit Price
6$ 1.3971
10$ 1.334
25$ 1.3072


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 454
Multiples : 1
QtyUnit Price
454$ 0.6023
461$ 0.5923


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 1.8375


Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9162
100$ 1.6747
2500$ 1.6747


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 454
Multiples : 1
QtyUnit Price
454$ 0.6023


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 461
Multiples : 1
QtyUnit Price
461$ 0.5923


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 129
Multiples : 1
QtyUnit Price
129$ 2.1212
131$ 2.0857


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 454
Multiples : 1
QtyUnit Price
454$ 0.6023
461$ 0.5923

   
Manufacturer
Product Category
RoHS - XON
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Product Type
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Brand
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SM1605E3/TR13 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SM1605E3/TR13 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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1N5610 thru 1N5613 Qualified Levels: Voidless Hermetically Sealed Unidirectional JAN, JANTX, and Available on Transient Voltage Suppressors JANTXV commercial versions Qualified per MIL-PRF-19500/434 DESCRIPTION This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppressor (TVS) designs is military qualified and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak Standoff Voltage selection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hard- glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in a surface mount MELF package configuration as a special order. Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. Important: For the latest information, visit our website 1N5610 thru 1N5613 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINATIONS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin available for commercial only. MARKING: Body painted and part number. POLARITY: Cathode band. Tape & Reel option: Standard per EIA-296. Consult factory for quantities. Weight: 1270 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5610 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant SP = Reference JANS Blank = Commercial JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition I Breakdown Current: The current used for measuring Breakdown Voltage V . (BR) (BR) I Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. D I Peak Pulse Current: The peak current during the impulse. PP P Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I . PP PP T Temperature Solder Pad: The maximum solder temperature that can be safely applied to the terminal. SP Temperature Coefficient of Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified V(BR) current temperature. V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. (BR) V Maximum clamping voltage at specified I (Peak Pulse Current) at the specified pulse conditions. C PP Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is V WM also referred to as Standoff Voltage. ELECTRICAL CHARACTERISTICS MINIMUM BREAKDOWN WORKING MAX MAXIMUM MAXIMUM MAXIMUM BREAK CURRENT PEAK STANDOFF CLAMPING PEAK PULSE TEMP. DOWN MAXIMUM dc REVERSE CURRENT VOLTAGE CURRENT COEF. TYPE VOLTAGE CURRENT VOLTAGE I V I OF V D C PP (BR) o V T = +25 C V V 10/1000 s 8/20 s 10/1000 s (BR) A WM WM V(BR) 1.0 mA I (BR) o Volts mA V (pk) A V (pk) A (pk) A (pk) % / C 1N5610 33.0 75.0 30.5 5 47.6 193 32.0 .093 1N5611 43.7 53.0 40.3 5 63.5 136 24.0 .094 1N5612 54.0 43.0 49.0 5 78.5 116 19.0 .096 1N5613 191 12.5 175 5 265 33 5.7 .100 T4-LDS-0241, Rev. 1 (112023) 2011 Microsemi Corporation Page 2 of 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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