Product Information

SMDB05Ce3/TR7

SMDB05Ce3/TR7 electronic component of Microchip

Datasheet
Diode: Transil array; 6V; 5A; bidirectional; 500W; SO8

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0764 ea
Line Total: USD 2.08

700 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
700 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SMDB05Ce3/TR7
Microchip

1 : USD 2.0764
100 : USD 2.0645
500 : USD 2.0289
5000 : USD 2.0171

     
Manufacturer
Product Category
Breakdown Voltage
Features Of Semiconductor Devices
Mounting
Case
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Leakage Current
Power Dissipation
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WWW.Microsemi .COM SMDA/B SMDA03 thru SMDA24C, e3 and SMDB03 thru SMDB24C, e3 4 LINE TVSarray SCOTTSDALE DIVISION DESCRIPTION APPEARANCE This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8 configuration giving protection to 4 unidirectional or bi-directional data or interface lines. It is designed for use in applications where protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning. These TVS arrays have peak pulse power ratings of 300 watts (SMDA) and 500 watts (SMDB) for an 8/20 sec pulse. They are suitable for protection of sensitive circuitry consisting of TTL, CMOS, DRAMs, SRAMs, HCMOS, HSIC and low-voltage interfaces from 3.3 volts to 24 volts IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM SMDA/B SMDA03 thru SMDA24C, e3 and SMDB03 thru SMDB24C, e3 4 LINE TVSarray SCOTTSDALE DIVISION SYMBOLS & DEFINITIONS Symbol Definition Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range. V WM V must be selected to be equal or be greater than the operating voltage of the line to be protected. WM V Minimum Breakdown Voltage: Minimum voltage the device will exhibit at a specified current BR Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a V C pulse time of 20 s. I Standby Current: Leakage current at V D WM. C Capacitance: Capacitance of the TVS as defined 0 volts at a frequency of 1 MHz and stated in picofarads. GRAPHS 10.0 1.0 0.1 0.01 Figure 1 Figure 2 Peak Pulse Power vs Pulse Time Pulse Wave Form OUTLINE AND SCHEMATIC PAD LAYOUT INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.188 0.197 4.77 5.00 B 0.150 0.158 3.381 4.01 C 0.053 0.069 1.35 1.75 1 8 1 8 D 0.011 0.021 0.28 0.53 2 7 2 7 F 0.016 0.050 0.41 1.27 3 6 3 6 G 0.050 BSC 1.27 BSC J 0.006 0.010 0.15 0.25 4 5 4 5 K 0.005 0.008 0.10 0.20 L 0.189 0.206 4.80 5.23 P 0.228 0.244 5.79 6.19 Unidirectional Bidirectional OUTLINE SCHEMATIC Copyright 2005 Microsemi Page 2 11-11-2005 REV R Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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