2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet SST12LP20 is a RF-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. This amplifier includes DC blocks and provides both input and output match to 50. Operating over the 2.42.5 GHz frequency band, the amplifier typically provides 30 dB gain with 28% power-added efficiency at 21 dBm. SST12LP20 has excellent linearity with typically 18 dBm at 3% EVM for 54 Mbps 802.11g modulation, while meeting 802.11g spectrum mask at 21 dBm. It requires only two external bias components, and features easy board-level usage, along with high-speed power-up/down control through a single combined reference voltage pin. SST12LP20 is offered in an 8-contact USON package. Features High gain: Small variation over temperature Typically 30 dB gain across 2.42.5 GHz over tempera- ~1 dB gain/power variation between 0C to +85C ture 0C to +85C and 29 dB gain from -40C to 0C Excellent on-chip power detection High linear output power: >15 dB dynamic range, dB-wise Linear Temperature >24 dBm P1dB stable and load insensitive - Single-tone measurement. Please refer to Absolute Maximum Stress Ratings on page 5 Input port matched to 50 internally Meets 802.11g OFDM ACPR requirement up to 21 dBm ~3% added EVM up to 18 dBm for 54 Mbps 802.11g Both input and output ports are DC decoupled. signal 802.11n HT20 ACPR requirement up to 18 dBm Meets 802.11b ACPR requirement up to 21 dBm Packages available 8-contact USON 2mm x 2mm x 0.55mm High power-added efficiency/Low operating cur- rent for 802.11b/g/n applications All non-Pb (lead-free) devices are RoHS compliant ~28%/138 mA P = 21 dBm for 802.11b/g OUT Single-pin low I power-up/down control REF I <2 mA REF Applications Low idle current WLAN (IEEE 802.11b/g/n) ~78 mA I CQ Home RF High-speed power-up/down Turn on/off time (10%- 90%) <100 ns Cordless phones Typical power-up/down delay with driver delay included <200 ns 2.4 GHz ISM wireless equipment Low shut-down current (~2 A) 2013 Silicon Storage Technology, Inc. www.microchip.com DS70005049C 05/132.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Product Description SST12LP20 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The devices input and output ports are matched to 50 internally. Both input and output ports are DC- decoupled and do not require DC-blocking capacitors. This helps reduce the system boards Bill of Materials (BOM) cost. The SST12LP20 is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n applications. It typically provides 30 dB gain with 28% power-added efficiency (PAE) POUT = 21 dBm for 802.11b/g. The SST12LP20 has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21 dBm and 802.11b spectrum mask at 21 dBm. The SST12LP20 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes REF the SST12LP20 controllable by an on/off switching signal directly from the baseband chip. These fea- tures, coupled with low operating current, make the SST12LP20 ideal for the final stage power amplifi- cation in battery-powered 802.11b/g/n WLAN transmitter applications. The SST12LP20 has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linear. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP20 is offered in 8-contact USON package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2013 Silicon Storage Technology, Inc. DS70005049C 05/13 2