SST25VF016B-50-4C-QAF

16 Mbit SPI Serial Flash SST25VF016B SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory Data Sheet FEATURES: Single Voltage Read and Write Operations Auto Address Increment (AAI) Programming 2.7-3.6V Decrease total chip programming time over Byte-Program operations Serial Interface Architecture End-of-Write Detection SPI Compatible: Mode 0 and Mode 3 Software polling the BUSY bit in Status Register High Speed Clock Frequency Busy Status readout on SO pin in AAI Mode Up to 80 MHz Hold Pin (HOLD ) Superior Reliability Suspends a serial sequence to the memory Endurance: 100,000 Cycles (typical) without deselecting the device Greater than 100 years Data Retention Write Protection (WP ) Low Power Consumption: Enables/Disables the Lock-Down function of the Active Read Current: 10 mA (typical) status register Standby Current: 5 A (typical) Software Write Protection Flexible Erase Capability Write protection through Block-Protection bits in Uniform 4 KByte sectors status register Uniform 32 KByte overlay blocks Temperature Range Uniform 64 KByte overlay blocks Commercial: 0C to +70C Fast Erase and Byte-Program: Industrial: -40C to +85C Chip-Erase Time: 35 ms (typical) Packages Available Sector-/Block-Erase Time: 18 ms (typical) Byte-Program Time: 7 s (typical) 8-lead SOIC (200 mils) 8-contact WSON (6mm x 5mm) All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION SSTs 25 series Serial Flash family features a four-wire, The SST25VF016B devices significantly improve perfor- SPI-compatible interface that allows for a low pin-count mance and reliability, while lowering power consumption. package which occupies less board space and ultimately The devices write (Program or Erase) with a single power lowers total system costs. The SST25VF016B devices are supply of 2.7-3.6V for SST25VF016B. The total energy enhanced with improved operating frequency and even consumed is a function of the applied voltage, current, and lower power consumption than the original SST25VFxxxA time of application. Since for any given voltage range, the devices. SST25VF016B SPI serial flash memories are SuperFlash technology uses less current to program and manufactured with SSTs proprietary, high-performance has a shorter erase time, the total energy consumed during CMOS SuperFlash technology. The split-gate cell design any Erase or Program operation is less than alternative and thick-oxide tunneling injector attain better reliability and flash memory technologies. manufacturability compared with alternate approaches. The SST25VF016B device is offered in both 8-lead SOIC (200 mils) and 8-contact WSON (6mm x 5mm) packages. See Figure 2 for pin assignments. 2008 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. S71271-03-000 9/08 These specifications are subject to change without notice. 116 Mbit SPI Serial Flash SST25VF016B Data Sheet SuperFlash X - Decoder Memory Address Buffers and Latches Y - Decoder I/O Buffers Control Logic and Data Latches Serial Interface CE SCK SI SO WP HOLD 1271 B1.0 FIGURE 1: Functional block Diagram 2008 Silicon Storage Technology, Inc. S71271-03-000 9/08 2