Product Information

SST25VF512-20-4C-SAE

Product Image X-ON

Datasheet
NAND Flash Serial-SPI 3.3V 512K-bit 64K x 8 20ns 8-Pin SOIC N Tube

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7689 ea
Line Total: USD 0.7689

1390 - Global Stock
Ships to you between
Tue. 20 Jun to Thu. 22 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2500 - Global Stock


Ships to you between Wed. 14 Jun to Tue. 20 Jun

MOQ : 100
Multiples : 100
100 : USD 0.7212
200 : USD 0.7188
400 : USD 0.7138
800 : USD 0.7112
1000 : USD 0.7075

10 - Global Stock


Ships to you between
Wed. 21 Jun to Mon. 26 Jun

MOQ : 1
Multiples : 1
1 : USD 2.3201
10 : USD 2.0143
30 : USD 1.8216
100 : USD 1.5512
500 : USD 1.4625
1000 : USD 1.4249

1390 - Global Stock


Ships to you between Tue. 20 Jun to Thu. 22 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7689
25 : USD 0.7003
100 : USD 0.6771

2500 - Global Stock


Ships to you between Wed. 14 Jun to Tue. 20 Jun

MOQ : 200
Multiples : 100
200 : USD 0.9595

     
Manufacturer
Microchip
Product Category
NOR Flash
Mounting Style
SMD/SMT
Package / Case
SOIC - 8
Series
SST25VF
Memory Size
512 kb it
Maximum Clock Frequency
20 MHz
Interface Type
SPI
Organisation
64 k x 8
Timing Type
Synchronous
Data Bus Width
8 bit
Supply Voltage - Min
2.7 V
Supply Voltage - Max
3.6 V
Minimum Operating Temperature
0 C
Maximum Operating Temperature
+ 70 C
Packaging
Tube
Hts Code
8542320051
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512 Kbit SPI Serial Flash SST25VF512 A Microchip Technology Company Data Sheet SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512 SPI serial flash memory is manufactured with SST s proprietary, high-performance CMOS SuperFlash technology. The split- gate cell design and thick-oxide tunneling injector attain better reliability and man- ufacturability compared with alternate approaches. Features Single 2.7-3.6V Read and Write Operations End-of-Write Detection Software Status Serial Interface Architecture Hold Pin (HOLD ) SPI Compatible: Mode 0 and Mode 3 Suspends a serial sequence to the memory 20 MHz Max Clock Frequency without deselecting the device Superior Reliability Write Protection (WP ) Endurance: 100,000 Cycles (typical) Enables/Disables the Lock-Down function of the status Greater than 100 years Data Retention register Low Power Consumption: Software Write Protection Active Read Current: 7 mA (typical) Write protection through Block-Protection bits in status Standby Current: 8 A (typical) register Flexible Erase Capability Packages Available Uniform 4 KByte sectors 8-lead SOIC (4.9mm x 6mm) Uniform 32 KByte overlay blocks 8-contact WSON Fast Erase and Byte-Program: Allnon-Pb(lead-free)devicesareRoHScompliant Chip-Erase Time: 70 ms (typical) Sector- or Block-Erase Time: 18 ms (typical) Byte-Program Time: 14 s (typical) Auto Address Increment (AAI) Programming Decrease total chip programming time over Byte-Pro- gram operations 2011 Silicon Storage Technology, Inc. www.microchip.com DS25076A 10/11512 Kbit SPI Serial Flash SST25VF512 A Microchip Technology Company Data Sheet Product Description SSTs serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512 SPI serial flash memory is manufactured with SSTs proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and man- ufacturability compared with alternate approaches. The SST25VF512 device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF512 device operates with a single 2.7-3.6V power supply. The SST25VF512 device is offered in both 8-lead SOIC and 8-contact WSON packages. See Figure 1 for the pin assignments. 2011 Silicon Storage Technology, Inc. DS25076A 10/11 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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