Product Information

SST25WF040BT-40I/SN

SST25WF040BT-40I/SN electronic component of Microchip

Datasheet
NOR Flash 8 Mbit, 1.8V SPI Serial Flash

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3300: USD 1.136 ea
Line Total: USD 3748.8

0 - Global Stock
MOQ: 3300  Multiples: 3300
Pack Size: 3300
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3300
Multiples : 3300
3300 : USD 1.3038

     
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RoHS - XON
Icon ROHS
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SST25WF080B 8 Mbit 1.8V SPI Serial Flash All devices are RoHS compliant Features Single Voltage Read and Write Operations Product Description - 1.65-1.95V Serial Interface Architecture SST25WF080B is a member of the Serial Flash 25 - SPI Compatible: Mode 0 and Mode 3 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which High Speed Clock Frequency occupies less board space and ultimately lowers total -40MHz system costs. SPI serial flash memory is manufactured Dual Input/Output Support with proprietary, high-performance CMOS SuperFlash - Fast-Read Dual-Output Instruction (3BH) technology. The split-gate cell design and thick-oxide - Fast-Read Dual I/O Instruction (BBH) tunneling injector attain better reliability and manufac- Superior Reliability turability compared with alternate approaches. - Endurance: 100,000 Cycles This Serial Flash significantly improve performance - Greater than 20 years Data Retention and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power Ultra-Low Power Consumption: supply of 1.65-1.95V. The total energy consumed is a - Active Read Current: 4 mA (typical) function of the applied voltage, current, and time of - Standby Current: 7 A (typical) application. Since for any given voltage range, the - Deep Power-down Current: 2 A (typical) SuperFlash technology uses less current to program Flexible Erase Capability and has a shorter erase time, the total energy con- - Uniform 4 KByte sectors sumed during any Erase or Program operation is less than alternative flash memory technologies. - Uniform 64 KByte overlay blocks Page Program Mode SST25WF080B is offered in 8-lead SOIC and 8-contact USON packages. See Figure 2-1 for the pin assign- - 256 Bytes/Page ments. Fast Erase and Page-Program: - Chip-Erase Time: 500 ms (typical) - Sector-Erase Time: 40 ms (typical) - Block-Erase Time: 80 ms (typical) - Page-Program Time: 0.8 ms/ 256 bytes (typical) End-of-Write Detection - Software polling the BUSY bit in Status Register Hold Pin (HOLD#) - Suspend a serial sequence without deselecting the device Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register Temperature Range - Industrial: -40C to +85C - Extended: -40C to +125C - AECQ-100 Qualified Packages Available - 8-lead SOIC (150 mils) - 8-contact USON (2mm x 3mm) 2013-2018 Microchip Technology Inc. DS20005164E-page 1SST25WF080B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors@microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
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