Product Information


SST26WF080B-104I/MF electronic component of Microchip

Microchip Technology Flash Memory 4Mb SQI Flash Memory 1.8V 8 TDFN

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.314 ea
Line Total: USD 0.314

20 - Global Stock
Ships to you between
Wed. 11 Oct to Tue. 17 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20 - Global Stock

Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 1
Multiples : 1
1 : USD 0.314

20 - Global Stock

Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 6
Multiples : 1
6 : USD 0.314

Product Category
NOR Flash
Mounting Style
Package / Case
Memory Size
8 Mbit
Interface Type
Sdi, Spi, Sqi
Kind Of Memory
Serial Flash
Type Of Integrated Circuit
Operating Frequency
104 MHz
Operating Voltage
1.65 To 1.95 V
Operating Temperature
- 40 To 85 C
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SST26WF040B/040BA SST26WF080B/080BA 1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Single Voltage Read and Write Operations Secure ID - 1.65-1.95V - 64 bit unique, factory pre-programmed identifier - User-programmable area Serial Interface Architecture Temperature Range - Mode 0 and Mode 3 - Industrial: -40C to +85C - Nibble-wide multiplexed I/Os with SPI-like serial command structure Packages Available - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - 8-contact WDFN (6mm x 5mm) High Speed Clock Frequency - 8-lead SOIC (150 mil) - 104 MHz max - 8-contact USON (2mm x 3mm) - 8-ball XFBGA (Z-Scale) Burst Modes All devices are RoHS compliant - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around Product Description Superior Reliability - Endurance: 100,000 Cycles (min) The Serial Quad I/O (SQI) family of flash-memory - Greater than 100 years Data Retention devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count Low Power Consumption: package. SST26WF040B/040BA and SST26WF080B/ - Active Read current: 15 mA (typical 104 MHz) 080BA also support full command-set compatibility to tradi- - Standby current: 10 A (typical) tional Serial Peripheral Interface (SPI) protocol. System - Deep Power-Down current: 1.8 A (typical) designs using SQI flash devices occupy less board space Fast Erase Time and ultimately lower system costs. - Sector/Block Erase: 18 ms (typ), 25 ms (max) All members of the 26 Series, SQI family are manufactured - Chip Erase: 35 ms (typ), 50 ms (max) with proprietary, high-performance CMOS SuperFlash Page-Program technology. The split-gate cell design and thick-oxide tun- - 256 Bytes per page in x1 or x4 mode neling injector attain better reliability and manufacturability End-of-Write Detection compared with alternate approaches. - Software polling the BUSY bit in status register The SST26WF040B/040BA and SST26WF080B/ Flexible Erase Capability 080BA significantly improves performance and reliabil- ity, while lowering power consumption. This device - Uniform 4 KByte sectors writes (Program or Erase) with a single power supply of - Four 8 KByte top and bottom parameter overlay 1.65-1.95V. The total energy consumed is a function of blocks the applied voltage, current, and time of application. - One 32 KByte top and bottom overlay block Since for any given voltage range, the SuperFlash - Uniform 64 KByte overlay blocks technology uses less current to program and has a Write-Suspend shorter erase time, the total energy consumed during - Suspend Program or Erase operation to access any Erase or Program operation is less than alternative another block/sector flash memory technologies. Software Reset (RST) mode SST26WF040B/040BA and SST26WF080B/080BA is Software Write Protection offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIC - Individual-Block Write Protection with permanent (150 mil), 8-contact USON, and 8-ball XFBGA (Z-Scale) lock-down capability packages. See Figure 2-1 for pin assignments. - 64 KByte blocks, two 32 KByte blocks, and Two configurations are available upon order: eight 8 KByte parameter blocks SST26WF040B and SST26WF080B default at power- - Read Protection on top and bottom 8 KByte up has the WP and Hold pins enabled and parameter blocks SST26WF040BA and SST26WF080BA default at power-up has the WP and Hold pins disabled. 2014-2017 Microchip Technology Inc. DS20005283C-page 1SST26WF040B/040BA SST26WF080B/080BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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