Product Information

SST39VF802C-70-4I-EKE-T

SST39VF802C-70-4I-EKE-T electronic component of Microchip

Datasheet
NOR Flash 2.7 to 3.6V 8Mbit Multi-Purpose Flash

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.9807 ea
Line Total: USD 5.98

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1000
Multiples : 1000
1000 : USD 3.1385

     
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8 Mbit (x16) Multi-Purpose Flash Plus SST39VF801C/SST39VF802C/SST39LF801C/SST39LF802C A Microchip Technology Company Data Sheet The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability com- pared with alternate approaches. The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories. Features Organized as 512K x16 Security-ID Feature SST: 128 bits User: 128 words Single Voltage Read and Write Operations Fast Read Access Time: 2.7-3.6V for SST39VF801C/802C 3.0-3.6V for SST39LF801C/802C 70 ns for SST39VF801C/802C 55 ns for SST39LF801C/802C Superior Reliability Fast Erase and Word-Program: Endurance: 100,000 Cycles (Typical) Greater than 100 years Data Retention Sector-Erase Time: 18 ms (typical) Block-Erase Time: 18 ms (typical) Low Power Consumption (typical values at 5 MHz) Chip-Erase Time: 40 ms (typical) Word-Program Time: 7 s (typical) Active Current: 5 mA (typical) Standby Current: 3 A (typical) Automatic Write Timing Auto Low Power Mode: 3 A (typical) Internal V Generation PP Hardware Block-Protection/WP Input Pin End-of-Write Detection Top Block-Protection (top 8 KWord) Bottom Block-Protection (bottom 8 KWord) Toggle Bits Data Polling Sector-Erase Capability Ready/Busy Pin Uniform 2 KWord sectors CMOS I/O Compatibility Block-Erase Capability JEDEC Standard Flexible block architecture one 8-, two 4-, one 16-, and fifteen 32-KWord blocks Flash EEPROM Pinouts and command sets Chip-Erase Capability Packages Available 48-lead TSOP (12mm x 20mm) Erase-Suspend/Erase-Resume Capabilities 48-ball TFBGA (6mm x 8mm) 48-ball WFBGA (4mm x 6mm) Hardware Reset Pin (RST ) AlldevicesareRoHScompliant Latched Address and Data 2011 Silicon Storage Technology, Inc. www.microchip.com DS25041A 05/118 Mbit (x16) Multi-Purpose Flash Plus SST39VF801C/SST39VF802C/SST39LF801C/SST39LF802C A Microchip Technology Company Data Sheet Product Description The SST39VF801C/802C and SST39LF801C/802C devices are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF801C/802CandSST39LF801C/802C write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST39VF801C/802C and SST39LF801C/802C devices provide a typical Word-Program time of 7 sec. These devices use Toggle Bit, Data Polling, or the RY/BY pin to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF801C/802C and SST39LF801C/802C devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system appli- cations, they significantly improve performanceand reliability, whilelowering power consumption.They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and con- figuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39VF801C/802C and SST39LF801C/802C are offered in 48-lead TSOP, 48-ball TFBGA, and 48-ball WFBGA packages. See Figures 2, 3, and 4 for pin assignments. 2011 Silicon Storage Technology, Inc. DS25041A 05/11 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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