Product Information

UATM30S2C

UATM30S2C electronic component of Microchip

Datasheet
RF Amplifier DC-30 GHz MMIC Amplifier 22dBm
Manufacturer: Microchip
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Price (USD)

25: USD 174.4801 ea
Line Total: USD 4362

0 - Global Stock
MOQ: 25  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 25
Multiples : 1

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UATM30S2C
Microchip

25 : USD 197.9775
50 : USD 188.1576
100 : USD 186.2784
250 : USD 184.41
500 : USD 182.574
1000 : USD 180.738
2500 : USD 178.9344
5000 : USD 177.1416
10000 : USD 175.3704

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 25
Multiples : 25

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UATM30S2C
Microchip

25 : USD 173.2752

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Additional Infomation About Product

UATM30S2C Datasheet CENTELLAX 0.04 - 30GHz Broadband MMIC Amplifier Application The UATM30S2C Broadband MMIC Amplifier is designed for general purpose broadband applica- tions in RFand microwave communications, test equipment and military systems. By using specific external components, the bandwidth of operation Device Highlights can be extended below 40MHz. Great 0.04-30GHz performance: Description Flat gain (10.25 0.75dB) High P at 30GHz (21dBm) The UATM30S2C is an eight stage traveling wave sat amplifier. The amplifier has been designed for flat High P at 30GHz (18dBm) -1dB gain, excellent return loss, and medium power. The Excellent input / output return loss amplifier typically provides 10.250.75dB gain and 21dBm Psat from 40MHz to 30GHz. Very high isolation >30dB dynamic gain control Features Integrated power detector The UATM30S2C has >30dB dynamic gain control, 100% DC, RF, and visually tested and includes a temperature-referenced power detec- tor output. Size: 1640x835um (64.6x32.9mil) Key Specifications Specifications pertain to wafer measurements with RF probes and DC bias cards 25C Vdd=7V, Idd=150mA, Zo=50 1.5 - 20GHz 0.04 - 30GHz Parameter Description Min Typ Max Min Typ Max S21 (dB) Small Signal Gain 9 10.25 9 10.25 Flatness (dB) Gain Flatness 0.5 1.25 0.75 1.25 S11 (dB) Input Match -22 -17 -17 -13 S22 (dB) Output Match -21 -16 -21 -16 S12 (dB) Reverse Isolation -42 -35 -37 -30 P (dBm) 1dB Compressed Output Power 16.5 18 16.5 18 -1dB P (dBm) Saturated Output Power 19.5 21 19.5 21 sat P 8dB (dBm) Output Power at 8dB Gain 18.5 20 out NF (dB) Noise Figure 7.5 7.5 RF (mV/mW) RF Detector Sensitivity 0.7 0.7 det CENTELLAX Web: UATM30S2C S21 UATM30S2C Noise Figure 8 14 7 12 6 10 5 8 4 6 3 4 2 2 1 7V, 150mA 4.3V, 90mA 7.5V, 190mA 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Frequency (GHz) Frequency (GHz) Typical IC performance measured on-wafer Typical IC performance with package de-embedded UATM30S2C S11, S22 UATM30S2C S12 0 0 7.5V, 190mA S11 7.5V, 190mA S22 7.5V, 190mA -5 -10 -10 -20 -15 -30 -20 -40 -25 -30 -50 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Frequency (GHz) Frequency (GHz) Typical IC performance measured on-wafer Typical IC performance measured on-wafer UATM30S2C Output Power UATM30S2C Group Delay 24 50 45 22 40 35 20 30 18 25 20 16 15 10 14 8V, 190mA Psat 8V, 190mA P-1 7.5V, 190mA 5 4.5V, 95mA Psat 4.5V, 95mA P-1 12 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Frequency (GHz) Frequency (GHz) Typical IC performance measured on-wafer Typical IC performance measured on-wafer Typical measurement data is available upon request. Email support centellax.com for more information. CENTELLAX Web:

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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