2N7002 A Features High Density Cell Design for Low R DS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 Thermal Resistance: 417C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain-Source Voltage 60 V DS 3 Gate-Source Voltage V 30 V GS B C Peak Gate-Source Voltage Tp<50s, 1 2 V 40 V GSM F E Duty Cycle=0.25 I 0.115 A Drain Current-Continuous D Power Dissipation P 0.3 W D G H J L K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. GATE C 0.047 0.055 1.20 1.40 2. SOURCE D 0.034 0.041 0.85 1.05 3. DRAIN G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking:7002A G 0.01 0.15 S 0.0004 0.006 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.020 0.50 0.00 7 0.20 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-1-01012019 1/4 MCCSEMI.COM2N7002 A ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V V =0V, I =250A V 60 (BR)DSS GS D V V =V , I =250A Gate-Threshold Voltage 1.0 1.4 2.5 V GS(th) DS GS D I V =30V, V =0V Gate-Body Leakage Current 1 A GSS GS DS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS I V =7.0V, V =10V On-State Drain Current 500 mA D(ON) DS GS V =10V, I =500mA 3 GS D Drain-Source On-Resistance R DS(on) V =4.5V, I =200mA 4 GS D V =10V, I =500mA 3 GS D V On-State Drain-Source Voltage V DS(on) V =5V, I =50mA 0.375 GS D Dynami Characteristics (1) C 50 Input Capacitance iss (1) V =25V,V =0V, f=1MHz C pF DS GS 25 Output Capacitance oss (1) C 5 Reverse Transfer Capacitance rss Switching Characteristics (1) t d(on) 20 Turn-On Delay Time V =25V,V =10V,R =50, DD GEN L ns I =500mA,R =25 D GEN (1) t 40 Turn-Off Delay Time d(off) Source-Drain Diode Characteristics V V =0V, I =115mA Diode Forward Voltage 0.6 0.82 1 V SD GS S I Source Current Continuous 115 mA S Note: 1. These parameters have no way to verify. Rev.3-1-01012019 2/4 MCCSEMI.COM