1 . : Features High Density Cell Design for Low R DS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 1 &KDQQHO Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS 026)(7 Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-323 Thermal Resistance: 625C/W Junction to Ambient A Parameter Rating Unit Symbol D Drain-ource Voltage6 V 60 V DS C Gate-Source Voltage V 0 V B GS I 0. A Drain Current-Continuous D F E Power Dissipation P 0.20 W D H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K L DIMENSIONS INCHES MM ,QWHUQDO 6WUXFWXUH DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 D 0.045 0.053 1.15 1.35 B C 0.083 0.096 2.10 2.45 1. GATE D 0.026 0.65 TYP. 2. SOURCE E 0.047 0.055 1.20 1.40 3. DRAIN G F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 S H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-4-12012020 1/4 MCCSEMI.COM 0DUNLQJ . 1 . : ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D 2 Gate-Threshold Voltage V V =V , I =1mA V 1.0 2. 0 GS(th) DS GS D 1 A I V =V, V =0V Zero Gate Voltage Drain Current SS DS GS 1 V = 0V, V =0V A Gate-%ody Leakage Current I GS DS * SS V =10V, I =500mA GS D 2 R Drain-Source On-Resistance DS(on) V =4.5V, I =200mA GS D Diode Forward Voltage V V =0V, I =300mA V SD GS S 1.5 V =0V, I =00mA 9 GS 6 5 4 & 3 U GO GW = V Dynami F Characteristics (3) C 40 iss Input Capacitance (3) C V =10V,V =0V, f=1MHz pF 30 oss DS GS Output Capacitance (3) C 10 rss Reverse Transfer Capacitance Switching Characteristics (3) t 10 d(on) Turn-2n Delay Time V =50V,V =10V,R =250, DD GS L ns R =50,R =25 GS GEN (3) t 15 d(off) Turn-2ff Delay Time V =0V, I =300mA,V =25V, t GS S R 3 Reverse Recovery Time rr dl/dt=-100A/s *DWH 6RXUFH =HQHU LRGH Gate-Source Breakdown Voltage BV I =1mA (Open Drain) 21.5 30 V GSO GS Note: 2. Pulse Test: Pulse :idth 300s, uty ycle& 2%. 3. These 3arameters ave + 1o ay to : 9erify. Rev.3-4-12012020 2/4 MCCSEMI.COM Q& KDUJH 5HFRYHUHG 9