BSS123 K Features High Dense Cell Design for Extremely Low R DS(ON) High speed switch Surface Mount Package Epoxy Meets UL 94 V-0 Flammability Rating N-Channel MOSFET ESD Human Body Model 2000V Moisture Sensitivity Level 1 Halogen Free.Gree Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 Thermal Resistance: 357C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain-Source Voltage 100 V DS 3 Gate-Source Voltage V 20 V GS B C I 0.17 A Drain Current-Continuous D 1 2 F E Power Dissipation P 0.35 W D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G H J <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. E 0.067 0.083 1.70 2.10 G F 0.018 0.024 0.45 0.60 Marking:123K G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.00 7 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4- 11032021 1/4 MCCSEMI.COM 5 ,1 6285&(BSS123 K ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 100 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =250A V 1.5 2.5 GS(th) DS GS D I V = 20V, V =0V Gate-Body Leakage Current 10 A GSS GS DS Zero Gate Voltage Drain Current I V =80V, V =0V 1 A DSS DS GS V =10V, I =0.25A 6 GS D Drain-Source On-Resistance R DS(on) V =4.5V, I =0.2A 9 GS D Diode Forward Voltage V V =0V, I =0.4A 1.3 V SD GS S Dynamic Characteristics C Input Capacitance iss 60 C V =25V,V =0V, f=1MHz pF 1 5 Output Capacitance oss DS GS Reverse Transfer Capacitance C 6 rss Switching Characteristics Total Gate Charge Q 2 g Q V =10V,V =10V,I =0.22A nC Gate-Source Charge 0.25 gs DS GS D Q Gate-Drain Charge 0.4 gd t 8 d(on) Turn-On Delay Time t 8 Turn-On Rise Time r V =30V,V =10V,R =50, DD GS G ns I =0.28A D t 13 Turn-Off Delay Time d(off) t 16 Turn-Off Fall Time f Rev.3-4- 11032021 2/4 MCCSEMI.COM