X-On Electronics has gained recognition as a prominent supplier of MPSA92-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MPSA92-AP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MPSA92-AP Micro Commercial Components (MCC)

MPSA92-AP electronic component of Micro Commercial Components (MCC)
MPSA92-AP Micro Commercial Components (MCC)
MPSA92-AP Bipolar Transistors - BJT
MPSA92-AP  Semiconductors

Images are for reference only
See Product Specifications
Part No. MPSA92-AP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 300 V 300 mA 50MHz 625 mW Through Hole TO-92
Datasheet: MPSA92-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 20000
Multiples : 1
20000 : USD 0.0386
N/A

Obsolete
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.0505
6000 : USD 0.0469
10000 : USD 0.0389
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.2802
10 : USD 0.2317
25 : USD 0.194
100 : USD 0.1228
500 : USD 0.0808
1000 : USD 0.055
N/A

Obsolete
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.0381
6000 : USD 0.0367
10000 : USD 0.0367
40000 : USD 0.0352
60000 : USD 0.0352
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5903
10 : USD 0.4842
100 : USD 0.082
1000 : USD 0.0455
2500 : USD 0.0425
10000 : USD 0.0321
20000 : USD 0.0301
40000 : USD 0.028
100000 : USD 0.0269
N/A

Obsolete
0
MOQ : 180
Multiples : 180
180 : USD 0.0411
N/A

Obsolete
0
MOQ : 180
Multiples : 180
180 : USD 0.0411
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the MPSA92-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MPSA92-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MPSA92 Features Complementary to MPSA42 Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 PNP Silicon High Epoxy Meets UL 94 V-0 Flammability Rating Voltage Transistor Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Thermal Resistance: 83.3/W Junction to Case Parameter Symbol Rating Unit TO-92 V Collector-Base Voltage -300 V CBO Collector-Emitter Voltage V -300 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -300 mA C A E 625 mW T =25,Derate A above 25 5 mW/ P Power Dissipation D B T =25,Derate 1.5 W C 1 2 3 above 25 12 mW/ G C Marking:A92 Internal Structure D C B 1.EMITTER DIMENSIONS 2.BASE INCHES MM 3.COLLECTOR DIM NOTE E MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-1-01012019 1/4 MCCSEMI.COMMPSA92 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -300 V I =-100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V -300 V I =-1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-10A, I =0 (BR)EBO E C Collector Cut-off Current I -0.25 A V =-200V, I =0 CBO CB E Emitter Cut-off Current I -0.25 V =-3V, I =0 A EBO EB C h V =-10V, I =-1mA 25 FE(1) CE C h V =-10V, I =-10mA DC Current Gain* 80 250 FE(2) CE C h V =-10V, I =-50mA 25 FE(3) CE C V I =-20mA, I =-2mA Collector-Emitter Saturation Voltage* -0.5 V CE(sat) C B V I =-20mA, I =-2mA Base-Emitter Saturation Voltage* -0.9 V BE(sat) C B f V =-5V, I =-10mA, f=30MHz Transition Frequency 50 MHz T CE C C V =-20V, I =0,f=1MHz Collector Output Capacitance 6 pF ob CB E *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-1-01012019 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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