SI2312 Features TrenchFET Power MOSFET Load Switch for Portable Devices Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C SOT-23 Thermal Resistance: 357C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain-Source Voltage 20 V DS 3 Gate-Source Voltage V 8 V GS B C I 5.0 A Drain Current-Continuous D 1 2 F E Source-Dra in Diode Current-Continuous I 1.04 A S Power Dissipation P 1.25 W D G H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking: S12 G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-5- 03252021 1/4 MCCSEMI.COM 5 ,1 6285&(SI2312 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =250A V 0.45 1.0 GS(th) DS GS D I V = 8V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS V =4.5V, I =5.0A 31.8 GS D m (Note 2) Drain-Source On-Resistance R DS(on) V =2.5V, I =4.7A 35.6 GS D V =1.8V, I =4.3A 41.4 GS D (Note 2) 6.0 g V =10V, I =5.0A Forward Transconductance S FS DS D Diode Forward Voltage V V =0V, I =4A 0.75 1.2 V SD GS S (Note 3) Dynamic Characteristics C Input Capacitance iss 865 C V =10V,V =0V, f=1MHz pF 105 Output Capacitance oss DS GS Reverse Transfer Capacitance C 55 rss Gate resistance R f=1MHz g 0.5 4.8 t d(on) 1 0 Turn-On Delay Time V =10V,R =2.2,V =5V, t D D L G EN 2 0 r Turn-On Rise Time I =4A,R =1 D G ns t 32 d(off) Turn-Off Delay Time t 12 f Turn-Off Fall Time Notes: 2. Pulse Test: Pulse Width300A, Duty Cycle2%. 3. These parameters have no way to verify. Rev.3-5- 03252021 2/4 MCCSEMI.COM