Product Information

JS28F00AP30EFA

JS28F00AP30EFA electronic component of Micron

Datasheet
NOR Flash Parallel/Serial 1.8V 1G-bit 64M x 16 110ns 56-Pin TSOP Tray

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 24.6795 ea
Line Total: USD 74.04

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1
3 : USD 24.6795
10 : USD 22.7567
25 : USD 21.1789
50 : USD 20.3964

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Access Time Max
Deleted
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512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx, JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx, RC28F00AP30BFx, RC28F00AP30TFx, PC28F00BP30EFx Security Features One-time programmable register: 64 OTP bits, High performance programmed with unique information from Mi- Easy BGA package features cron 2112 OTP bits available for customer pro- 100ns initial access for 512Mb, 1Gb Easy BGA gramming 105ns initial access for 2Gb Easy BGA Absolute write protection: V = V PP SS 25ns 16-word asynchronous page read mode Power-transition erase/program lockout 52 MHz (Easy BGA) with zero WAIT states and Individual zero-latency block locking 17ns clock-to-data output synchronous burst Individual block lock-down read mode Password access 4-, 8-, 16-, and continuous word options for burst Software mode 25s (TYP) program suspend TSOP package features 25s (TYP) erase suspend 110ns initial access for 512Mb, 1Gb TSOP Flash Data Integrator optimized Both Easy BGA and TSOP package features Basic command set and extended function inter- Buffered enhanced factory programming (BEFP) face (EFI) command set compatible at 2 MB/s (TYP) using a 512-word buffer Common flash interface 1.8V buffered programming at 1.46 MB/s (TYP) Density and packaging using a 512-word buffer 56-lead TSOP package (512Mb, 1Gb) Architecture 64-ball Easy BGA package (512Mb, 1Gb, 2Gb) MLC: highest density at lowest cost Quality and reliability Symmetrically blocked architecture (512Mb, 1Gb, JESD47 compliant 2Gb) Operating temperature: 40C to +85C Asymmetrically blocked architecture (512Mb, Minimum 100,000 ERASE cycles per block 1Gb) four 32KB parameter blocks: top or bottom 65nm process technology configuration 128KB main blocks Blank check to verify an erased block Voltage and power V (core) voltage: 1.72.0V CC V (I/O) voltage: 1.73.6V CCQ Standby current: 70A (TYP) for 512Mb 75A (TYP) for 1Gb 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) 16-bit wide data bus 09005aef845667b3 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 p30 65nm MLC 512Mb-1gb 2gb.pdf - Rev. D 5/17 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb, 1Gb, 2Gb: P30-65nm Features Discrete and MCP Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi- cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con- tact the factory for devices not found. Note: Not all part numbers listed here are available for ordering. Table 1: Discrete Part Number Information Part Number Category Category Details Package JS = 56-lead TSOP, lead free PC = 64-ball Easy BGA, lead-free RC = 64-ball Easy BGA, leaded Product Line 28F = Micron Flash memory Density 512 = 512Mb 00A = 1Gb 00B = 2Gb Product Family P30 (V = 1.72.0V V = 1.73.6V) CC CCQ Parameter Location B/T = Bottom/Top parameter E = Symmetrical Blocks Lithography F = 65nm Features * Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor- mation. Sample part number: JS28F512P30EF* Table 2: Standard Part Numbers Density Configuration Medium JS PC RC 512Mb Bottom boot Tray JS28F512P30BFA PC28F512P30BFA Tape and Reel PC28F512P30BFB Top boot Tray JS28F512P30TFA PC28F512P30TFA Tape and Reel PC28F512P30TFB Uniform Tray JS28F512P30EFA PC28F512P30EFA Tape and Reel 1Gb Bottom boot Tray JS28F00AP30BFA PC28F00AP30BFA RC28F00AP30BFA Tape and Reel PC28F00AP30BFB Top boot Tray JS28F00AP30BTFA PC28F00AP30TFA RC28F00AP30TFA Tape and Reel Uniform Tray JS28F00AP30EFA PC28F00AP30EFA Tape and Reel 2Gb Uniform Tray PC28F00BP30EFA Tape and Reel 09005aef845667b3 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 p30 65nm MLC 512Mb-1gb 2gb.pdf - Rev. D 5/17 EN 2013 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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