Product Information

M29F160FB5AN6F2

M29F160FB5AN6F2 electronic component of Micron

Datasheet
NOR Flash Parallel 5V 16Mbit 2M/1M x 8bit/16bit 55ns 48-Pin TSOP T/R
Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Multiples : 1500
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Additional Infomation About Product

M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B RoHS-compliant packages Features TSOP48 Supply voltage SO44 (16Mb not available for this package) V = 5V CC Automotive device grade 3 Access time: 55ns Temperature: 40 to +125C Program/erase controller Automotive device grade 6 Embedded byte/word program algorithms Temperature: 40 to +85C Erase suspend and resume modes Automotive grade certified (AEC-Q100) Low power consumption Standby and automatic standby 100,000 PROGRAM/ERASE cycles per block Electronic signature Manufacturer code: 0x01h Top device codes M29F200FT: 0x2251 M29F400FT: 0x2223 M29F800FT: 0x22D6 M29F160FT: 0x22D2 Bottom device codes M29F200FB: 0x2257 M29F400FB: 0x22AB M29F800FB: 0x2258 M29F160FB: 0x22D8 CCMTD-1725822587-8401 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29fxxxf/t 2mb-16mb.pdf - Rev. C 5/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.M29FxxxFT/B Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Device Type M29F = 5V Density 200 = 2Mb 400 = 4Mb 800 = 8Mb 160 = 16Mb (not available in SO 44 package) Technology F = 110nm Configuration T = Top boot B = Bottom boot Speed 55 = 55ns device speed in conjunction with temperature range = 3, which denotes Auto Grade 40 to 125 C parts 5A = 55ns access time (Auto Grade) only in conjunction with the Grade 6 option Package M = SO 44 N = TSOP 48 12mm x 20mm AL 42 Temperature Range 6 = 40C to +85C 3 = 40C to +125C Shipping Options blank = standard packing (Tray) E = RoHS-compliant package, standard packing (tray) T = Tape and reel packing (24mm) F = RoHS-compliant package, tape and reel packing (24mm) Fab Location 2 = Fab 13 (Singapore) CCMTD-1725822587-8401 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29fxxxf/t 2mb-16mb.pdf - Rev. C 5/18 EN 2013 Micron Technology, Inc. All rights reserved.

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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