M29W400DB55N6E Micron

M29W400DT M29W400DB 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory Features Supply voltage V = 2.7 V to 3.6 V for Program, Erase CC and Read (1) SO44 (M) Access time: 45, 55, 70 ns Programming time 10 s per byte/word typical 11 memory blocks 1 boot block (top or bottom location) TSOP48 (N) 12 x 20 mm 2 parameter and 8 main blocks Program/Erase controller FBGA Embedded byte/word program algorithms Erase Suspend and Resume modes Read and Program another block during (1) TFBGA48 (ZA) Erase Suspend 6 x 9 mm Unlock bypass program command Faster production/batch programming FBGA Temporary block unprotection mode Low power consumption Standby and Automatic Standby TFBGA48 (ZE) 6 x 8 mm 100,000 Program/Erase cycles per block Electronic signature Manufacturer code: 0020h 1. These packages are no more in mass production. Top device code M29W400DT: 00EEh Bottom device code M29W400DB: 00EFh RoHS packages Automotive Device Grade 3 Temperature: 40 to 125 C Automotive grade certified April 2009 Rev 8 1/48 www.numonyx.com 1Contents M29W400DT, M29W400DB Contents 1 Description . 6 2 Signal descriptions . 13 2.1 Address inputs (A0-A17) . 13 2.2 Data inputs/outputs (DQ0-DQ7) 13 2.3 Data inputs/outputs (DQ8-DQ14) . 13 2.4 Data input/output or Address input (DQ15A-1) 13 2.5 Chip Enable (E) 13 2.6 Output Enable (G) 13 2.7 Write Enable (W) . 14 2.8 Reset/Block Temporary Unprotect (RP) 14 2.9 Ready/Busy output (RB) 14 2.10 Byte/Word Organization Select (BYTE) 14 2.11 V supply voltage 15 CC 2.12 V ground 15 SS 3 Bus operations 16 3.1 Bus Read . 16 3.2 Bus Write . 16 3.3 Output Disable . 16 3.4 Standby 16 3.5 Automatic Standby 16 3.6 Special bus operations . 17 3.7 Electronic signature . 17 3.8 Block protection and blocks unprotection . 17 4 Command interface . 19 4.1 Read/Reset command . 19 4.2 Auto Select command . 19 4.3 Program command 19 4.4 Unlock Bypass command . 20 4.5 Unlock Bypass Program command . 20 2/48