Product Information

M58BW016FB7T3F

M58BW016FB7T3F electronic component of Micron

Datasheet
NOR Flash Parallel/Serial 3V/3.3V 16M-bit 512K x 32 70ns Automotive 80-Pin PQFP T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 5.6473 ea
Line Total: USD 2823.65

0 - Global Stock
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 500
Multiples : 1
500 : USD 5.6473

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Organisation
Data Bus Width
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Operating Supply Voltage
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
LoadingGif

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M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage V = 2.7 V to 3.6 V for program, erase DD and read V = V = 2.4 V to 3.6 V for I/O DDQ DDQIN buffers V = 12 V for fast program (optional) PP High performance Access times: 70, 80 ns PQFP80 (T) 56 MHz effective zero wait-state burst read Synchronous burst read Asynchronous page read Hardware block protection LBGA WP pin for write protect of the 2 outermost parameter blocks and all main blocks RP pin for write protect of all blocks Optimized for FDI drivers LBGA80 10 12 mm Fast program / erase suspend latency time < 6 s Common Flash interface Memory blocks RoHS packages available 8 parameters blocks (top or bottom) 31 main blocks Low power consumption 5 A typical deep power-down 60 A typical standby for M58BW016DT/B 150 A typical standby for M58BW016FT/B Automatic standby after asynchronous read Electronic signature Manufacturer code: 20h Top device code: 8836h Bottom device code: 8835h 100 K write/erase cycling + 20 years data retention (minimum) High reliability level with over 1 M write/erase cycling sustained July 2011 Rev 18 1/70 www.numonyx.com 1Contents M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Contents 1 Description . 7 1.1 Block protection .11 2 Signal descriptions . 14 2.1 Address inputs (A0-A18) . 14 2.2 Data inputs/outputs (DQ0-DQ31) . 14 2.3 Chip Enable (E) 14 2.4 Output Enable (G) 14 2.5 Output Disable (GD) . 15 2.6 Write Enable (W) . 15 2.7 Reset/Power-down (RP) 15 2.8 Latch Enable (L) 15 2.9 Burst Clock (K) . 16 2.10 Burst Address Advance (B) . 16 2.11 Valid Data Ready (R) 16 2.12 Write Protect (WP) 16 2.13 Supply voltage (V DD) 16 2.14 Output supply voltage (V ) . 17 DDQ 2.15 Input supply voltage (V ) . 17 DDQIN ) 17 2.16 Program/erase supply voltage (V PP 2.17 Ground (V and V ) 17 SS SSQ 2.18 Dont use (DU) . 17 2.19 Not connected (NC) . 17 3 Bus operations 18 3.1 Asynchronous bus operations . 18 3.1.1 Asynchronous bus read . 18 3.1.2 Asynchronous latch controlled bus read 18 3.1.3 Asynchronous page read 19 3.1.4 Asynchronous bus write . 19 3.1.5 Asynchronous latch controlled bus write 19 3.1.6 Output Disable 19 2/70

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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