Product Information

MT25QL256ABA8E12-1SAT TR

MT25QL256ABA8E12-1SAT TR electronic component of Micron

Datasheet
NOR Flash SPI FLASH NOR SLC 64MX4 TBGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 10.4548
10 : USD 9.1124
25 : USD 8.9058
50 : USD 8.8623
100 : USD 7.9488
250 : USD 7.9163
500 : USD 7.5901
1000 : USD 7.2529
2500 : USD 6.6767
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Speed
Memory Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Standard
Factory Pack Quantity :
Subcategory
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256Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QL256ABA Options Marking Features Voltage SPI-compatible serial bus interface 2.73.6V L Single and double transfer rate (STR/DTR) Density Clock frequency 256Mb 256 133 MHz (MAX) for all protocols in STR Device stacking 90 MHz (MAX) for all protocols in DTR Monolithic A Dual/quad I/O commands for increased through- Device generation B put up to 90 MB/s Die revision A Supported protocols: Extended, Dual and Quad I/O Pin configuration both STR and DTR RESET and HOLD 8 Execute-in-place (XIP) Sector size PROGRAM/ERASE SUSPEND operations 64KB E Volatile and nonvolatile configuration settings Packages JEDEC-standard, RoHS- Software reset compliant Additional reset pin for selected part numbers 24-ball T-PBGA 05/6mm 8mm 12 3-byte and 4-byte address modes enable memory (5 5 array) access beyond 128Mb 24-ball T-PBGA 05/6mm 8mm 14 Dedicated 64-byte OTP area outside main memory (4 6 array) Readable and user-lockable 16-pin SOP2, 300 mils SF Permanent lock with PROGRAM OTP command (SO16W, SO16-Wide, SOIC-16) Erase capability W-PDFN-8 6mm 5mm W7 Bulk erase (MLP8 6mm 5mm) Sector erase 64KB uniform granularity W-PDFN-8 8mm 6mm W9 Subsector erase 4KB, 32KB granularity (MLP8 8mm 6mm) Erase performance: 400KB/sec (64KB sector) Security features Erase performance: 80KB/sec (4KB sub-sector) Standard security 0 Program performance: 2MB/sec Special options Security and write protection Standard S Volatile and nonvolatile locking and software Automotive A write protection for each 64KB sector Operating temperature range Nonvolatile configuration locking From 40C to +85C IT Password protection From 40C to +105C AT Hardware write protection: nonvolatile bits From 40C to +125C UT (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA19h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) CCMTD-1725822587-3368 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) B = 2 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) C = 4 die/1 S SC = 8-pin SOP2, 150 mils SE = 8-pin SOP2, 208 mils Device Generation SF = 16-pin SOP2, 300 mils B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm 1 Die Revision 5x = WLCSP package A = Rev. A B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB subsectors Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET and HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. CCMTD-1725822587-3368 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN 2014 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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