128Mb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QU128ABA Options Marking Features Voltage SPI-compatible serial bus interface 1.72.0V U Single and double transfer rate (STR/DTR) Density Clock frequency 128Mb 128 166 MHz (MAX) for all protocols in STR Device stacking 90 MHz (MAX) for all protocols in DTR Monolithic A Dual/quad I/O commands for increased through- Device generation B put up to 90 MB/s Die revision A Supported protocols in both STR and DTR Pin configuration Extended I/O protocol RESET and HOLD 8 Dual I/O protocol Sector Size Quad I/O protocol 64KB E Execute-in-place (XIP) Packages JEDEC-standard, RoHS- PROGRAM/ERASE SUSPEND operations compliant Volatile and nonvolatile configuration settings 24-ball T-PBGA, 05/6mm x 8mm (5 x 12 Software reset 5 array) Additional reset pin for selected part numbers 24-ball T-PBGA 05/6mm x 8mm (4 x 14 Dedicated 64-byte OTP area outside main memory 6 array) Readable and user-lockable Wafer level chip-scale package,15 54 Permanent lock with PROGRAM OTP command balls , 9 active balls (XFWLBGA 0.5P) Erase capability 8-pin SOP2, 208 mils body width SE Bulk erase (SO8W) Sector erase 64KB uniform granularity 16-pin SOP2, 300 mils body width SF Subsector erase 4KB, 32KB granularity (SO16W) Security and write protection W-PDFN-8 6mm x 5mm (MLP8 6mm W7 Volatile and nonvolatile locking and software x 5mm) write protection for each 64KB sector W-PDFN-8 8mm x 6mm (MLP8 8mm W9 Nonvolatile configuration locking x 6mm) Password protection Standard security 0 Hardware write protection: nonvolatile bits Special options (BP 3:0 and TB) define protected area size Standard S Program/erase protection during power-up Automotive A CRC detects accidental changes to raw data Operating temperature range Electronic signature From 40C to +85C IT JEDEC-standard 3-byte signature (BA18h) From 40C to +105C AT Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) PDF: 09005aef85830b66 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q qlhs U 128 ABA xxT.pdf - Rev. I 05/17 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb, 1.8V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C Density Special Options 064 = 64Mb (8MB) S = Standard 128 = 128Mb (16MB) A = Automotive grade AEC-Q100 256 = 256Mb (32MB) 512 = 512Mb (64MB) Security Features 01G = 1Gb (128MB) 0 = Standard default security 02G = 2Gb (256MB) Package Codes Stack 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) A = 1 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) B = 2 die/1 S SC = 8-pin SOP2, 150 mil C = 4 die/1 S SE = 8-pin SOP2, 208 mil SF = 16-pin SOP2, 300 mil Device Generation W7 = 8-pin W-PDFN, 6 x 5mm B = 2nd generation W9 = 8-pin W-PDFN, 8 x 6mm 1 5x = WLCSP package Die Revision A = Rev. A Sector size B = Rev. B E = 64KB sectors, 4KB and 32KB sub-sectors Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET & HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. PDF: 09005aef85830b66 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q qlhs U 128 ABA xxT.pdf - Rev. I 05/17 EN 2014 Micron Technology, Inc. All rights reserved.