Product Information

MT29F32G08ABCABH1-10ITZ:A

MT29F32G08ABCABH1-10ITZ:A electronic component of Micron

Datasheet
SLC NAND Flash Parallel/Serial 3.3V 32Gbit 4G x 8Bit 20ns 100-Pin V-BGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 55.7644 ea
Line Total: USD 55.76

739 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
440 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 49.8818
10 : USD 46.7786
25 : USD 45.1122
50 : USD 44.0013
100 : USD 40.5358
250 : USD 40.5358
500 : USD 40.0769
1120 : USD 38.9661

     
Manufacturer
Product Category
Series
Packaging
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
MT29F32G08AECBBH1-12IT:B electronic component of Micron MT29F32G08AECBBH1-12IT:B

SLC NAND Flash Parallel/Serial 3.3V 32G-bit 4G x 8 100-Pin VBGA
Stock : 0

MT29F32G08CBACAWP:C electronic component of Micron MT29F32G08CBACAWP:C

MLC NAND Flash Parallel 3.3V 32G-bit 4G x 8 48-Pin TSOP
Stock : 0

MT29F32G08CBACAWP-Z:C electronic component of Micron MT29F32G08CBACAWP-Z:C

NAND FLASH, DENSITY 32 GB, VOLTAGE 3.3V
Stock : 6

MT29F32G08AFACAWP-ITZ:C electronic component of Micron MT29F32G08AFACAWP-ITZ:C

SLC NAND Flash Parallel 3.3V 32G-bit 4G x 8 48-Pin TSOP-I
Stock : 0

MT29F32G08AECCBH1-10Z:C electronic component of Micron MT29F32G08AECCBH1-10Z:C

SLC NAND Flash Parallel/Serial 3.3V 32G-bit 4G x 8 100-Pin VBGA
Stock : 0

MT29F32G08CBADAWP:D electronic component of Micron MT29F32G08CBADAWP:D

MLC NAND Flash 3.3V 32G-bit 4G x 8 48-Pin TSOP
Stock : 0

MT29F32G08CBADBWP-12IT:D electronic component of Micron MT29F32G08CBADBWP-12IT:D

MLC NAND Flash Parallel/Serial 3.3V 32Gbit 4G x 8bit 4G x 8bit 48-Pin TSOP
Stock : 0

MT29F32G08CBADAWP-M:D TR electronic component of Micron MT29F32G08CBADAWP-M:D TR

NAND Flash MLC 32G 4GX8 TSOP
Stock : 865

MT29F32G08CBADBWP-12IT:D TR electronic component of Micron MT29F32G08CBADBWP-12IT:D TR

NAND Flash MLC 32G 4GX8 TSOP
Stock : 0

MT29F32G08CBACAWP-Z:C TR electronic component of Micron MT29F32G08CBACAWP-Z:C TR

NAND Flash MLC 32G 4GX8 TSOP
Stock : 0

Image Description
MT29F3T08EUHBBM4-3R:B electronic component of Micron MT29F3T08EUHBBM4-3R:B

384GX8 NAND FLASH PLASTIC COMMERCIAL PBF LBGA 3.3V SYNCH/PAGE READ MASS STORAGE B0KB
Stock : 0

ERA-2AEB1580X electronic component of Panasonic ERA-2AEB1580X

158 Ohms ±0.1% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thin Film
Stock : 12063

MT29F4G16ABBDAH4:D electronic component of Micron MT29F4G16ABBDAH4:D

SLC NAND Flash Parallel 1.8V 4G-bit 256M x 16 25ns 63-Pin VFBGA
Stock : 0

MT29F64G08AECABH1-10Z:A electronic component of Micron MT29F64G08AECABH1-10Z:A

SLC NAND Flash Parallel/Serial 3.3V 64Gbit 8G x 8Bit 20ns 100-Pin V-BGA
Stock : 0

MT29F64G08CBCABH1-10Z:A electronic component of Micron MT29F64G08CBCABH1-10Z:A

MLC NAND Flash Parallel/Serial 3.3V 64G-bit 8G x 8 20ns 100-Pin VBGA
Stock : 0

MT29RZ4B2DZZHHWD-18I.84F electronic component of Micron MT29RZ4B2DZZHHWD-18I.84F

Multichip Packages MASSFLASH/LPDDR2 6G
Stock : 0

6-1437195-2 electronic component of TE Connectivity 6-1437195-2

FFC Jumper Cable Polytetrafluoroethylene 60Conductors 24AWG
Stock : 7200

SC431LI5SK-1TRT electronic component of Semtech SC431LI5SK-1TRT

Voltage References ADJ LV SHUNT REG.SOT23 -1% 5L
Stock : 0

SC445TETRT electronic component of Semtech SC445TETRT

LED Lighting Drivers 4-STRING DRIVER OF 150MA LED&A
Stock : 0

ERA-2AEB4420X electronic component of Panasonic ERA-2AEB4420X

442 Ohms ±0.1% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thin Film
Stock : 51675

Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A J/K/M AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A K/M CAB, MT29F256G08AUCAB Operation status byte provides software method for Features detecting 1 Open NAND Flash Interface (ONFI) 2.2-compliant Operation completion Single-level cell (SLC) technology Pass/fail condition Organization Write-protect status Page size x8: 8640 bytes (8192 + 448 bytes) Data strobe (DQS) signals provide a hardware meth- Block size: 128 pages (1024K + 56K bytes) od for synchronizing data DQ in the synchronous Plane size: 2 planes x 2048 blocks per plane interface Device size: 32Gb: 4096 blocks Copyback operations supported within the plane 64Gb: 8192 blocks from which data is read 128Gb: 16,384 blocks Quality and reliability 256Gb: 32,768 blocks Data retention: JESD47G compliant see qualifi- Synchronous I/O performance cation report Up to synchronous timing mode 5 Endurance: 60,000 PROGRAM/ERASE cycles Clock rate: 10ns (DDR) Operating temperature: Read/write throughput per pin: 200 MT/s Commercial: 0C to +70C Asynchronous I/O performance Industrial (IT): 40C to +85C Up to asynchronous timing mode 5 Package t t RC/ WC: 20ns (MIN) 52-pad LGA Read/write throughput per pin: 50 MT/s 48-pin TSOP Array performance 100-ball BGA Read page: 35s (MAX) 132-ball BGA Program page: 350s (TYP) 1. The ONFI 2.2 specification is available at Note: Erase block: 1.5ms (TYP) www.onfi.org. Operating Voltage Range V : 2.73.6V CC V : 1.71.95V, 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 114). RESET (FFh) required as first command after pow- er-on PDF: 09005aef83e0bed4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 M73A 32Gb 64Gb 128Gb 256Gb AsyncSync NAND.pdf Rev. H 2/14 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 32G 08 A B A A A WP Z ES :A Micron Technology Design Revision A = First revision NAND Flash Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density Reserved for Future Use 32G = 32Gb Blank 64G = 64Gb 128G = 128Gb Wafer Process Applied 256G = 256Gb Blank = Polyimide Process Not Applied Z = Polyimide Process Applied Device Width 08 = 8 bits Operating Temperature Range Blank = Commercial (0C to +70C) Level IT = Industrial (40C to +85C) Bit/Cell Speed Grade (synchronous mode only) A 1-bit -10 = 200 MT/s Classification Package Code 1 Die of CE of R/B I/O C5 = 52-pad VLGA 14mm x 18mm x 1.0mm 1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm B 1 1 1 Common 1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm E 2 2 2 Separate 1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm 1 F 2 2 2 Common J1 = 132-ball VBGA 12mm x 18mm x 1.0mm 1 J2 = 132-ball TBGA 12mm x 18mm x 1.2mm J 4 2 2 Common 1 J3 = 132-ball LBGA 12mm x 18mm x 1.4mm K 4 2 2 Separate 1 WP = 48-pin TSOP (CPL) M 4 4 4 Separate Interface U 8 4 4 Separate A = Async only B = Sync/Async Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) CC CCQ Generation Feature Set C = V : 3.3V (2.73.6V), V : 1.8V (1.71.95V) CC CCQ A = First set of device features Note: 1. Pb-free package. PDF: 09005aef83e0bed4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 M73A 32Gb 64Gb 128Gb 256Gb AsyncSync NAND.pdf Rev. H 2/14 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted