MT40A1G8SA-062E AUT:E Micron

8Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 2 Gig x 4 2G4 V = 2.5V, 125mV, +250mV PP 1 Gig x 8 1G8 On-die, internal, adjustable V generation REFDQ 512 Meg x 16 512M16 1.2V pseudo open-drain I/O 78-ball FBGA package (Pb-free) x4, Refresh time of 8192-cycle at T temperature range: C x8 64ms at -40C to 85C 9mm x 13.2mm Rev. A PM 32ms at >85C to 95C 8mm x 12mm Rev. B, D, G WE 16ms at >95C to 105C 7.5mm x 11mm Rev. E, H, J, R SA 16 internal banks (x4, x8): 4 groups of 4 banks each 96-ball FBGA package (Pb-free) x16 8 internal banks (x16): 2 groups of 4 banks each 9mm x 14mm Rev. A HA 8n-bit prefetch architecture 8mm x 14mm Rev. B JY Programmable data strobe preambles 7.5mm x 13.5mm Rev. D, E, H LY Data strobe preamble training 7.5mm x 13mm Rev. J, R TB Command/Address latency (CAL) Timing cycle time Multipurpose register READ and WRITE capability 0.625ns CL = 22 (DDR4-3200) -062E Write leveling 0.682ns CL = 21 (DDR4-2933) -068 Self refresh mode 0.750ns CL = 19 (DDR4-2666) -075 Low-power auto self refresh (LPASR) 0.750ns CL = 18 (DDR4-2666) -075E Temperature controlled refresh (TCR) 0.833ns CL = 17 (DDR4-2400) -083 Fine granularity refresh 0.833ns CL = 16 (DDR4-2400) -083E Self refresh abort 0.937ns CL = 15 (DDR4-2133) -093E Maximum power saving 1.071ns CL = 13 (DDR4-1866) -107E Output driver calibration Operating temperature Nominal, park, and dynamic on-die termination Commercial (0 T 95C) None C (ODT) Industrial (40 T 95C) IT C Data bus inversion (DBI) for data bus Automotive (40 T 105C) AT C Command/Address (CA) parity Revision :A, :B, :D, :E, Databus write cyclic redundancy check (CRC) :G, :H, :J, :R Per-DRAM addressability 1. Not all options listed can be combined to Note: Connectivity test define an offered product. Use the part JEDEC JESD-79-4 compliant catalog search on 8Gb: x4, x8, x16 DDR4 SDRAM Features Table 1: Key Timing Parameters (Continued) 1 t t t Speed Grade Data Rate (MT/s) Target CL-nRCD-nRP AA (ns) RCD (ns) RP (ns) -075E 2666 18-18-18 13.50 13.50 13.50 -075 2666 19-19-19 14.25 (13.75) 14.25 (13.75) 14.25 (13.75) -083E 2400 16-16-16 13.32 13.32 13.32 -083 2400 17-17-17 14.16 (13.75) 14.16 (13.75) 14.16 (13.75) -093E 2133 15-15-15 14.06 (13.50) 14.06 (13.50) 14.06 (13.50) -093 2133 16-16-16 15.00 15.00 15.00 -107E 1866 13-13-13 13.92 (13.50) 13.92 (13.50) 13.92 (13.50) Note: 1. Refer to the Speed Bin Tables for additional details. Table 2: Addressing Parameter 2048 Meg x 4 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 4 2 Bank group address BG 1:0 BG 1:0 BG0 Bank count per group 4 4 4 Bank address in bank group BA 1:0 BA 1:0 BA 1:0 Row addressing 128K (A 16:0 ) 64K (A 15:0 ) 64K (A 15:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) 1 Page size 512B 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. CCMTD-1725822587-9875 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb ddr4 dram.pdf - Rev. S 12/2020 EN 2015 Micron Technology, Inc. All rights reserved.