MT40A256M16LY-062E:F

4Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A1G4 MT40A512M8 MT40A256M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 1 Gig x 4 1G4 V = 2.5V, 125mV/+250mV PP 512 Meg x 8 512M8 On-die, internal, adjustable V generation 2 REFDQ 256 Meg x 16 256M16 1.2V pseudo open-drain I/O FBGA package (Pb-free) x4, x8 T maximum up to 95C C 78-ball (9mm x 11.5mm) Rev. A HX 64ms, 8192-cycle refresh up to 85C 78-ball (9mm x 10.5mm) Rev. B RH 32ms, 8192-cycle refresh at >85C to 95C 78-ball (8mm x 12mm) Rev. E WE 16 internal banks (x4, x8): 4 groups of 4 banks each 78-ball (7.5mm x 11mm) Rev. F SA 8 internal banks (x16): 2 groups of 4 banks each FBGA package (Pb-free) x16 8n-bit prefetch architecture 96-ball (9mm x 14mm) Rev. A HA Programmable data strobe preambles 96-ball (9mm x 14mm) Rev. B GE Data strobe preamble training 96-ball (7.5mm x 13.5mm) Rev. E, F LY Command/Address latency (CAL) Timing cycle time Multipurpose register READ and WRITE capability 0.625ns CL = 22 (DDR4-3200) -062E Write leveling 0.682ns CL = 20 (DDR4-2933) -068E Self refresh mode 0.682ns CL = 21 (DDR4-2933) -068 Low-power auto self refresh (LPASR) 0.750ns CL = 18 (DDR4-2666) -075E Temperature controlled refresh (TCR) 0.750ns CL = 19 (DDR4-2666) -075 Fine granularity refresh 0.833ns CL = 16 (DDR4-2400) -083E Self refresh abort 0.833ns CL = 17 (DDR4-2400) -083 Maximum power saving 0.937ns CL = 15 (DDR4-2133) -093E Output driver calibration 0.937ns CL = 16 (DDR4-2133) -093 Nominal, park, and dynamic on-die termination 1.071ns CL = 13 (DDR4-1866) -107E (ODT) Operating temperature Data bus inversion (DBI) for data bus Commercial (0 T 95C) None C Command/Address (CA) parity Industrial (40 T 95C) IT C Databus write cyclic redundancy check (CRC) Revision :A Per-DRAM addressability :B Connectivity test :E sPPR and hPPR capability :F JEDEC JESD-79-4 compliant 1. Not all options listed can be combined to Notes: define an offered product. Use the part catalog search on 4Gb: x4, x8, x16 DDR4 SDRAM Features Table 1: Key Timing Parameters 1 t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -062Y 3200 22-22-22 13.75 (13.32) 13.75 (13.32) 13.75 (13.32) -062E 3200 22-22-22 13.75 13.75 13.75 -068 2933 21-21-21 14.32 (13.75) 14.32 (13.75) 14.32 (13.75) -075E 2666 18-18-18 13.50 13.50 13.50 -075 2666 19-19-19 14.25 14.25 14.25 -083E 2400 16-16-16 13.32 13.32 13.32 -083 2400 17-17-17 14.16 (13.75) 14.16 (13.75) 14.16 (13.75) -093E 2133 15-15-15 14.06 (13.50) 14.06 (13.50) 14.06 (13.50) -093 2133 16-16-16 15.00 15.00 15.00 -107E 1866 13-13-13 13.92 (13.50) 13.92 (13.50) 13.92 (13.50) Note: 1. Refer to the Speed Bin Tables for additional details. Table 2: Addressing Parameter 1024 Meg x 4 512 Meg x 8 256 Meg x 16 Number of bank groups 4 4 2 Bank group address BG 1:0 BG 1:0 BG0 Bank count per group 4 4 4 Bank address in bank group BA 1:0 BA 1:0 BA 1:0 Row addressing 64K (A 15:0 ) 32K (A 14:0 ) 32K (A 14:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) 1 2 Page size 512B / 1KB 1KB 2KB Notes: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. 2. Die revision dependant. CCMTD-1725822587-9046 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 4gb ddr4 dram.pdf - Rev. K 06/18 EN 2014 Micron Technology, Inc. All rights reserved.