Product Information

MT41J128M16JT-093:K

MT41J128M16JT-093:K electronic component of Micron

Datasheet
FBGA-96 DDR SDRAM ROHS

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6391 ea
Line Total: USD 3.64

287 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
514 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 5.5054
10 : USD 5.0308
100 : USD 4.5562
250 : USD 4.5443
500 : USD 4.3308
1000 : USD 4.0697
2448 : USD 4.0104
4896 : USD 4.0104
11016 : USD 4.0104

     
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2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 1 Options Marking Features Configuration V = V = 1.5V 0.075V DD DDQ 512 Meg x 4 512M4 1.5V center-terminated push/pull I/O 256 Meg x 8 256M8 Differential bidirectional data strobe 128 Meg x 16 128M16 8n-bit prefetch architecture FBGA package (Pb-free) x4, x8 Differential clock inputs (CK, CK ) 78-ball (8mm x 10.5mm) Rev. K DA 8 internal banks 78-ball (8mm x 10.5mm) Rev. N EF Nominal and dynamic on-die termination (ODT) FBGA package (Pb-free) x16 for data, strobe, and mask signals 96-ball (8mm x 14mm) Rev. K JT Programmable CAS READ latency (CL) 96-ball (8mm x 14mm) Rev. N TW Posted CAS additive latency (AL) Timing cycle time Programmable CAS WRITE latency (CWL) based on 938ps CL = 14 (DDR3-2133) -093 t CK 1.07ns CL = 13 (DDR3-1866) -107 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.25ns CL = 11 (DDR3-1600) -125 (via the mode register set MRS ) 1.5ns CL = 9 (DDR3-1333) -15E Selectable BC4 or BL8 on-the-fly (OTF) 1.87ns CL = 7 (DDR3-1066) -187E Self refresh mode Operating temperature T of 0C to 95C C Commercial (0C T +95C) None C 64ms, 8192 cycle refresh at 0C to 85C Industrial (40C T +95C) IT C 32ms, 8192 cycle refresh at 85C to 95C Revision :K / :N Self refresh temperature (SRT) Automatic self refresh (ASR) 1. Not all options listed can be combined to Note: Write leveling define an offered product. Use the part Multipurpose register catalog search on 2Gb: x4, x8, x16 DDR3 SDRAM Features Table 2: Addressing Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16 Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row addressing 32K (A 14:0 ) 32K (A 14:0 ) 16K (A 13:0 ) Bank addressing 8 (BA 2:0 ) 8 (BA 2:0 ) 8 (BA 2:0 ) Column addressing 2K (A 11, 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) Page size 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41J256M8DA-125:K - : MT41J Configuration Package Speed Revision :K / :N Revision Configuration 512 Meg x 4 512M4 Temperatu re 256 Meg x 8 256M8 Commercial None 128 Meg x 16 128M16 Industrial temperature IT Package Speed Grade t 78-ball 8mm x 10.5mm FBGA DA -093 CK = 0.938ns, CL = 14 t 78-ball 8mm x 10.5mm FBGA EF -107 CK = 1.071ns, CL = 13 t 96-ball 8mm x 14mm FBGA JT -125 CK = 1.25ns, CL = 11 t 96-ball 8mm x 14mm FBGA TW -15E CK = 1.5ns, CL = 9 t -187E CK = 1.87ns, CL = 7 Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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