Product Information

MT41K64M16TW-107 AAT:J TR

MT41K64M16TW-107 AAT:J TR electronic component of Micron

Datasheet
DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin F-BGA T/R
Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.4069 ea
Line Total: USD 5.41

4838 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4838 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 5.4069
10 : USD 4.9459
100 : USD 4.4975
250 : USD 4.4726
500 : USD 4.3355
2000 : USD 3.887
4000 : USD 3.8496
10000 : USD 3.7998

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Additional Infomation About Product

1Gb: x8, x16 Automotive DDR3L SDRAM Addendum Description Addendum Automotive DDR3L SDRAM MT41K128M8 16 Meg x 8 x 8 banks MT41K64M16 8 Meg x 16 x 8 banks Write leveling Description Multipurpose register This addendum provides information to add Automo- Output driver calibration tive Ultra-high Temperature (AUT) option for the data AEC-Q100 sheet. This addendum does not provide detailed infor- PPAP submission mation about the device. Refer to the data sheet (1Gb: 8D response time x8, x16 Automotive DDR3L SDRAM, Rev. B 2/15 EN) for a complete description of device functionality, op- 1 Options Marking erating modes, and specifications for the same Micron Configuration part number products. The 1.35V DDR3L SDRAM de- 128 Meg x 8 128M8 vice is a low-voltage version of the 1.5V DDR3 SDRAM 64 Meg x 16 64M16 device. Refer to the DDR3 (1.5V) SDRAM data sheet FBGA package (Pb-free) x8 specifications when running in 1.5V compatible 78-ball FBGA (8mm x 10.5mm) DA mode. FBGA package (Pb-free) x16 96-ball FBGA (8mm x 14mm) TW Features Timing cycle time V = V = 1.35V (1.283V to 1.45V) DD DDQ 1.07ns CL = 13 (DDR3-1866) -107 Backward compatible to V = V = 1.5V 0.075V DD DDQ Product certification Differential bidirectional data strobe Automotive A 8n-bit prefetch architecture Operating temperature Differential clock inputs (CK, CK ) Industrial (40C T +95C) IT C 8 internal banks Automotive (40C T +105C) AT C Nominal and dynamic on-die termination (ODT) 3 Ultra-high (40C T +125C) UT C for data, strobe, and mask signals Revision :J Programmable CAS (READ) latency (CL) Programmable CAS additive latency (AL) 1. Not all options listed can be combined to Notes: Programmable CAS (WRITE) latency (CWL) define an offered product. Use the part Fixed burst length (BL) of 8 and burst chop (BC) of 4 catalog search on 1Gb: x8, x16 Automotive DDR3L SDRAM Addendum Description Table 2: Addressing Parameter 128 Meg x 8 64 Meg x 16 Configuration 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K Row address 16K A 13:0 8K A 12:0 Bank address 8 BA 2:0 8 BA 2:0 Column address 1K A 9:0 1K A 9:0 Page Size 1KB 2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K64M16DA-107AAT:J - : MT41K Configuration Package Speed Revision :J Revision Configuration Mark 128 Meg x 8 128M8 64 Meg x 16 64M16 Temperature Mark Industrial temperature IT Package Mark Automotive temperature AT 78-ball FBGA, 8mm x 10.5mm DA Ultra-high temperature UT 96-ball FBGA, 8mm x 14mm TW Certification Mark Speed Grade Mark t Automotive CK = 1.07ns, CL = 13 107 A Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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