X-On Electronics has gained recognition as a prominent supplier of MT47H128M4CF-25E:G TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT47H128M4CF-25E:G TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT47H128M4CF-25E:G TR Micron

MT47H128M4CF-25E:G TR electronic component of Micron
MT47H128M4CF-25E:G TR Micron
MT47H128M4CF-25E:G TR DRAM
MT47H128M4CF-25E:G TR  Semiconductors

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See Product Specifications
Part No. MT47H128M4CF-25E:G TR
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR2 SDRAM 512Mbit 128Mx4 1.8V 60-Pin FBGA T/R
Datasheet: MT47H128M4CF-25E:G TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 6.9473 ea
Line Total: USD 13894.6 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 2000
Multiples : 2000
2000 : USD 6.9473
3001 : USD 6.193

   
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We are delighted to provide the MT47H128M4CF-25E:G TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT47H128M4CF-25E:G TR and other electronic components in the DRAM category and beyond.

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DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA T/R
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DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image MT47H128M8CF-25:H
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image MT47H128M8CF-25:H TR
DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin FBGA T/R
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 32 Meg x 4 x 4 banks MT47H64M8 16 Meg x 8 x 4 banks MT47H32M16 8 Meg x 16 x 4 banks 1 Options Marking Features Configuration V = 1.8V 0.1V, V = 1.8V 0.1V DD DDQ 128 Meg x 4 (32 Meg x 4 x 4 banks) 128M4 JEDEC-standard 1.8V I/O (SSTL 18-compatible) 64 Meg x 8 (16 Meg x 8 x 4 banks) 64M8 Differential data strobe (DQS, DQS ) option 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16 FBGA package (Pb-free) x16 4n-bit prefetch architecture 84-ball FBGA (8mm x 12.5mm) Rev. G HR Duplicate output strobe (RDQS) option for x8 84-ball FBGA (8mm x 12.5mm) Rev. H NF DLL to align DQ and DQS transitions with CK FBGA package (Pb-free) x4, x8 4 internal banks for concurrent operation 60-ball FBGA (8mm x 10mm) Rev. G CF Programmable CAS latency (CL) 60-ball FBGA (8mm x 10mm) Rev. H SH Posted CAS additive latency (AL) FBGA package (lead solder) x16 t 84-ball FBGA (8mm x 12.5mm) Rev. G HW WRITE latency = READ latency - 1 CK FBGA package (lead solder) x4, x8 Selectable burst lengths: 4 or 8 60-ball FBGA (8mm x 10mm) Rev. G JN Adjustable data-output drive strength Timing cycle time 64ms, 8192-cycle refresh 1.875ns CL = 7 (DDR2-1066) -187E On-die termination (ODT) 2.5ns CL = 5 (DDR2-800) -25E Industrial temperature (IT) option 3.0ns CL = 5 (DDR2-667) -3 Self refresh RoHS-compliant Standard None Supports JEDEC clock jitter specification Low-power L Operating temperature 2 Commercial (0C T +85C) None C Industrial (40C T +95C IT C 40C T +85C) A Revision :G/:H 1. Not all options listed can be combined to Notes: define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. 2. For extended CT operating temperature, see Table 11 (page 30), Note 7. Table 1: Key Timing Parameters Data Rate (MT/s) t Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 RC (ns) -187E 400 533 800 800 1066 54 -25E 400 533 800 800 n/a 55 -3 400 533 667 n/a n/a 55 CCMTD-1725822587-9657 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 512MbDDR2.pdf - Rev. Z 09/18 EN 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb: x4, x8, x16 DDR2 SDRAM Features Table 2: Addressing Parameter 128 Meg x 4 64 Meg x 8 32 Meg x 16 Configuration 32 Meg x 4 x 4 banks 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks Refresh count 8K 8K 8K Row address A 13:0 (16K) A 13:0 (16K) A 12:0 (8K) Bank address BA 1:0 (4) BA 1:0 (4) BA 1:0 (4) Column address A 11, 9:0 (2K) A 9:0 (1K) A 9:0 (1K) Figure 1: 512Mb DDR2 Part Numbers Example Part Number: MT47H128M4SH-25E:H - : MT47H Configuration Package Speed Revision :G/:H Revision Configuration 128 Meg x 4 128M4 64 Meg x 8 64M8 L Low power 32 Meg x 16 32M16 IT Industrial temperature Package Pb-free Speed Grade t 84-ball 8mm x 12.5mm FBGA HR CK = 3ns, CL = 5 -3 60-ball 8mm x 10.0mm FBGA CF t CK = 2.5ns, CL = 5 -25E NF 84-ball 8mm x 12.5mm FBGA t -187E CK = 1.875ns, CL = 7 60-ball 8mm x 10.0mm FBGA SH Lead solder 84-ball 8mm x 12.5mm FBGA HW 60-ball 8mm x 10mm FBGA JN 1. Not all speeds and configurations are available in all packages. Note: FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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