8GB (x72, ECC, SR) 260-Pin DDR4 SODIMM
Features
DDR4 SDRAM SODIMM
MTA9ASF1G72HZ 8GB
Figure 1: 260-Pin SODIMM (MO-310, R/C D2)
Features
Module Height: 30mm (1.181 in)
DDR4 functionality and operations supported as de-
fined in the component data sheet
260-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rate: PC4-3200, PC4-2666
8GB (1 Gig x 72)
V = 1.20V (NOM)
DD
V = 2.5V (NOM)
PP
V = 2.5V (NOM)
DDSPD
Supports ECC error detection and correction
Options Marking
Nominal and dynamic on-die termination (ODT) for
Operating temperature
data, strobe, and mask signals
Commercial None
(0C T 95C)
Low-power auto self refresh (LPASR)
OPER
Package
Data bus inversion (DBI) for data bus
260-pin DIMM (halogen-free) Z
On-die V generation and calibration
REFDQ
Frequency/CAS latency
Single-rank
0.625ns @ CL = 22 (DDR4-3200) -3G2
2
On-board I C temperature sensor with integrated
0.75ns @ CL = 19 (DDR4-2666) -2G6
serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Gold edge contacts
Halogen-free
Fly-by topology
Terminated control, command, and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
t t t
10 \ RCD RP RC
PC4- 24 22 21 20 19 18 17 16 15 14 13 12 11 9 (ns) (ns) (ns)
-3G2 3200 3200, 3200, 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333\ 13.75 13.75 45.75
2933 2933
-2G9 2933 2933 2933 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333\ 14.32 14.32 46.32
-2G6 2666 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333\ 14.16 14.16 46.16
CCM005-341111752-10451 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
asf9c1gx72hz.pdf Rev. C 7/18 EN 2017 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Speed
Grade8GB (x72, ECC, SR) 260-Pin DDR4 SODIMM
Features
Table 1: Key Timing Parameters (Continued)
Data Rate (MT/s)
CL =
t t t
10 \ RCD RP RC
PC4- 24 22 21 20 19 18 17 16 15 14 13 12 11 9 (ns) (ns) (ns)
-2G3 2400 2400 2400 2133 2133 1866 1866 1600 1600 1333\ 14.16 14.16 46.16
-2G1 2133 2133 2133 1866 1866 1600 1600 1333\ 13.5 13.5 46.5
1333
Table 2: Addressing
Parameter 8GB
Row address 64K A[15:0]
Column address 1K A[9:0]
Device bank group address 4 BG[1:0]
Device bank address per group 4 BA[1:0]
Device configuration 8Gb (1 Gig x 8), 16 banks
Module rank address CS0_n
Table 3: Part Numbers and Timing Parameters 8GB Modules
1
Base device: MT40A1G8, 8Gb DDR4 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
8GB 1 Gig x 72 25.6 GB/s 0.625ns/3200 22-22-22
MTA9ASF1G72HZ-362__
MT/s
MTA9ASF1G72HZ-2G6__ 8GB 1 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19
Notes: 1. The data sheet for the base device can be found at micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MTA9ASF1G72HZ-3G2E1.
CCM005-341111752-10451 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
asf9c1gx72hz.pdf Rev. C 7/18 EN 2017 Micron Technology, Inc. All rights reserved.
Speed
Grade