Product Information

MTEDCBE002SAJ-1M2

MTEDCBE002SAJ-1M2 electronic component of Micron

Datasheet
Managed NAND SLC 2GB EUSBSSD TSOP

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 29.9578
25 : USD 27.957
50 : USD 27.0654
N/A

Obsolete
     
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RoHS - XON
Icon ROHS
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Sustained Read
Sustained Write
Operating Supply Voltage
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Embedded USB Mass Storage Drive (e230) Features Embedded USB Mass Storage Drive (e230) MTEDCAR002SAJ-1M2/1M2IT, MTEDCAR004SAJ-1N2/1N2IT MTEDCAR008SAJ-1N2/1N2IT, MTEDCAR016SAJ-1N2/1N2IT MTEDCBR002SAJ-1M2/1M2IT, MTEDCBR004SAJ-1N2/1N2IT MTEDCBR008SAJ-1N2/1N2IT, MTEDCBR016SAJ-1N2/1N2IT MTEDCBE002SAJ-1M2/1M2IT, MTEDCBE004SAJ-1N2/1N2IT MTEDCBE008SAJ-1N2/1N2IT, MTEDCBE016SAJ-1N2/1N2IT MTEDCAE002SAJ-1M2/1M2IT, MTEDCAE004SAJ-1N2/1N2IT MTEDCAE008SAJ-1N2/1N2IT, MTEDCAE016SAJ-1N2/1N2IT 3 Capacity (unformatted) : 2GB, 4GB, 8GB, or 16GB Features Form factor Micron NAND Flash Standard (36.9mm x 26.6mm x 9.6mm) Interface: Universal Serial Bus (USB) Specification, Low profile (36.9mm x 26.6mm x 5.8mm) Revision 2.0 Voltage: 5V 5% and 3.3V 5% USB support Operating temperature USB Specification, Revisions 2.0, 1.1 Commercial (0C to +70C) USB Mass Storage Class Specification, Revision Industrial (40C to +85C) 1.0 1. Typical transfer rate measured with Notes: Performance H2BENCH 3.6. 1 Sequential READ : 30 MB/s 2. Assumes that 70% of total usable drive ca- 1 Sequential WRITE : 22 MB/s (2GB and 4GB) 28 pacity contains static files. MB/s (8GB and16GB) 3. 1GB = 1 billion bytes formatted capacity is Reliability: >1 million device hours mean time be- less. tween failure (MTBF) Warranty: Contact your Micron sales representative Endurance: useful operating life of at least 5 years for further information regarding the product, under the following conditions: including product warranties. 8760 power-on hours per year Active 100% of power-on hours 2 Typical operating conditions : 2GB module: 16 GB/day 4GB module: 32 GB/day 8GB module: 64 GB/day 16GB module: 128 GB/day Static and dynamic wear-leveling 15-bit error correction code (ECC) Reliability reporting PDF: 09005aef84970b4f Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 eusb MTED 230 embedded.pdf - Rev. D 4/13 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Embedded USB Mass Storage Drive (e230) Features Part Numbering Information Microns embedded USB drives are available in different configurations and densities. Visit www.micron.com for a list of valid part numbers. Table 1: Part Number Example Part Number Category Operat- ing Micron Drive Drive NAND NAND Temper- Produc- Tech- Product Inter- Form Drive Flash Product Sector Compo- Revi- ature tion nology Family face Factor Density Type Family Size nent sion Range Status MT ED C AE 002 S AJ -1 M 1 IT ES Table 2: Part Number Information Scheme Part Number Category Category Details Micron Technology Micron Technology Product Family ED = Embedded drive Drive Interface C = USB 2.0 Drive Form Factor AE = Embedded USB: 5V standard profile (36.9mm x 26.6mm x 9.6mm) BE = Embedded USB: 5V low profile (36.9mm x 26.6mm x 5.8mm) AR = Embedded USB: 3V standard profile (36.9mm x 26.6mm x 9.6mm) BR = Embedded USB: 3V low profile (36.9mm x 26.6mm x 5.8mm) Drive Density 002 = 2GB 004 = 4GB 008 = 8GB 016 = 16GB NAND Flash Type S = SLC Product Family AJ = Option J Sector Size 1 = 512-byte NAND Component M = 8Gb x8 3.3V N = 16Gb x8 3.3V Revision 1 = First generation 2 = Second generation 3 = Third generation Operating Tempera- Blank = Commercial (0C to 70C) ture Range IT = Industrial (40C to 85C) Production Status Blank = Production ES = Engineering sample MS = Mechanical sample PDF: 09005aef84970b4f Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 eusb MTED 230 embedded.pdf - Rev. D 4/13 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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