Product Information

PC28F256M29EWHB

PC28F256M29EWHB electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 256M-bit 32M x 8/16M x 16 100ns 64-Pin BGA T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 2.3403 ea
Line Total: USD 4680.6

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2000
Multiples : 2000
2000 : USD 2.3403

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
LoadingGif

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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx V /WP pin protection PP Features Protects first or last block regardless of block 2Gb = stacked device (two 1Gb die) protection settings Supply voltage Software protection V = 2.73.6V (program, erase, read) CC Volatile protection V = 1.65V (I/O buffers) CCQ CC Nonvolatile protection Asynchronous random/page read Password protection Page size: 16 words or 32 bytes Password access Page access: 25ns Extended memory block Random access: 100ns (Fortified BGA) 128-word (256-byte) block for permanent, secure 110ns (TSOP) identification Buffer program: 512-word program buffer Programmed or locked at the factory or by the Program time customer 0.88s per byte (1.14 MB/s) TYP when using full Low power consumption: Standby mode 512-word buffer size in buffer program JESD47-compliant Memory organization 100,000 minimum ERASE cycles per block Uniform blocks: 128-Kbytes or 64-Kwords each Data retention: 20 years (TYP) Program/erase controller 65nm multilevel cell (MLC) process technology Embedded byte (x8)/word (x16) program algo- Package rithms 56-pin TSOP, 14 x 20mm Program/erase suspend and resume capability 64-ball fortified BGA, 13 x 11mm Read from another block during a PROGRAM Green packages available SUSPEND operation RoHS-compliant Read or program another block during an ERASE Halogen-free SUSPEND operation Operating temperature BLANK CHECK operation to verify an erased block Ambient: 40C to +85C Unlock bypass, block erase, chip erase, and write to buffer capability Fast buffered/batch programming Fast block/chip erase PDF: 09005aef849b4b09 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29ew 256mb 2gb.pdf - Rev. E 11/16 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.mi- cron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Notes Package JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant RC = 64-ball Fortified BGA, 11mm x 13mm, leaded Product designator 28F = NOR parallel interface Density 256 = 256Mb 512 = 512Mb 00A = 1Gb 00B = 2Gb Device type M29EW = Embedded Flash memory (3V core, page, uniform block) Device function H = Highest block protected by V /WP 1 PP L = Lowest block protected by V /WP PP Features A/B/D/E or an asterisk (*) = Combination of features, including packing media, special features, and specific customer request information Note: 1. For 2Gb device, H also indicates protection of the lowest block by V /WP . PP Table 2: Standard Part Numbers by Density, Medium, and Package Package Density Medium JS PC RC 256Mb Tray JS28F256M29EWHA PC28F256M29EWHA RC28F256M29EWHA JS28F256M29EWLA PC28F256M29EWLA RC28F256M29EWLA Tape and Reel JS28F256M29EWHB PC28F256M29EWHB RC28F256M29EWHB JS28F256M29EWLB PC28F256M29EWLB 512Mb Tray JS28F512M29EWHA PC28F512M29EWHD RC28F512M29EWHA JS28F512M29EWLA PC28F512M29EWLA RC28F512M29EWLA Tape and Reel JS28F512M29EWHB PC28F512M29EWHB RC28F512M29EWHB JS28F512M29EWLB PC28F512M29EWLB 1Gb Tray JS28F00AM29EWHA PC28F00AM29EWHA RC28F00AM29EWHA JS28F00AM29EWLA PC28F00AM29EWLA RC28F00AM29EWLA Tape and Reel JS28F00AM29EWHB PC28F00AM29EWHB RC28F00AM29EWHB 2Gb Tray PC28F00BM29EWHA RC28F00BM29EWHA PDF: 09005aef849b4b09 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29ew 256mb 2gb.pdf - Rev. E 11/16 EN 2012 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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