Product Information

MSMCJLCE33A

MSMCJLCE33A electronic component of Microchip

Datasheet
ESD Suppressors / TVS Diodes Uni-Directional TVS

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.2669 ea
Line Total: USD 6.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Wed. 08 May

MOQ : 1
Multiples : 1

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MSMCJLCE33A
Microchip

1 : USD 6.2669
100 : USD 5.8322

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Termination Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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MSMCGLCE6.5A MXLSMCGLCE170Ae3, MSMCJLCE6.5A MXLSMCJLCE170Ae3 Screening in 1500 Watt Low Capacitance Surface reference to Available MIL-PRF-19500 Mount Transient Voltage Suppressor available DESCRIPTION This high-reliability surface mount Transient Voltage Suppressor (TVS) product family includes a rectifier diode in series with and in the opposite direction to the primary TVS protection diode. The circuit being protected sees only the rectifier diode s low 100 pF capacitance. They are available in either a DO- 215AB (gull-wing) or DO-214AB (J-bend) package and RoHS compliant versions are available. The low capacitance of these TVS devices allows them to be applied to the protection of high-frequency signal and communication lines in inductive switching environments or systems exposed to the secondary effects of lightning per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. DO-215AB They also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability (SMCG) Package is required, two of these low capacitance TVS devices may be used in parallel and opposite directions (anti-parallel) for complete ac protection (figure 6). Important: For the latest information, visit our website MSMCGLCE6.5A MXLSMCGLCE170Ae3, MSMCJLCE6.5A MXLSMCJLCE170Ae3 MAXIMUM RATINGS 25 C unless otherwise stated Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T and T -65 to +150 C J STG (1) Thermal Resistance Junction-to-Lead R 20 C/W JL P 1500 W Peak Pulse Power dissipation 25 C (at 10/1000 s, PP (2) see figures 1, 2, and 3) Clamping Factor Full Rated Power CF 1.4 50 % Rated Power 1.30 -9 t (0 volts to V min.) t < 5x10 s clamping (BR) clamping Rated Average Power Dissipation T = +50 C P 5.0 W L M(AV) o Solder Temperature 10 s T 260 C SP Notes: 1. Typical junction to lead (tab) at mounting plane. 2. With a repetition rate of 0.01% or less. When pulse testing, do not pulse in opposite direction (see application schematics section herein and figures 5 & 6 for further protection in both directions.) MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026. MARKING: Part number with abbreviated prefix (MCLC6.5A, MCLC6.5Ae3, MCLC33, MCLC33e3, etc.). POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B with 16 mm tape (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.25 grams. See Package Dimensions on last page. PART NOMENCLATURE M SM C G LC E 6.5 A e3 Reliability Level* RoHS Compliance M e3 = RoHS Compliant MA Blank = non-RoHS Compliant MX MXL +/-5%Tolerance Level *(see High Reliability Up-Screened Plastic Reverse Stand-Off Voltage Products Portfolio) (see Electrical Characteristics table) Surface Mount Package Encapsulated Plastic Package 1500 W Power Level Low Capacitance Lead Form G = Gull-wing J = J-bend RF01002, Rev. C (1/4/13) 2013 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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