LN60A01ES-LF Monolithic Power Systems

LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control The Future of Analog IC Technology DESCRIPTION FEATURES 600V Breakdown Voltage The LN60A01 is a three channel, 600V N- Three N-Channel MOSFETs Channel, enhancement mode power FET One Gate control to All Three FETs manufactured in MPS s proprietary, high- voltage DMOS technology. Rds(on)=200 at Vgs=10V Switching Current>0.1A This advanced technology has been especially Fast Switching tailored to minimize the on-state resistance, provide superior switching performance, and APPLICATIONS withstand high energy pulses in the avalanche High Efficiency AC/DC Adaptor and commutation modes. This device is well Offline Switching Power Supply suited for high efficiency switched mode power Active Power Factor Correction supplies and active power factor correction. MPS and The Future of Analog IC Technology are Registered Trademarks The LN60A01 is available in PDIP8 and SOIC8 of Monolithic Power Systems, Inc. package. TYPICAL APPLICATION 400V 400V 400V A B C R2 R3 R1 470k 470k 470k Gate V V V CC1 CC2 CC3 LN60A01EP Rev. 0.91 www.MonolithicPower.com 1 1/15/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. 2010 MPS. All Rights Reserved. LN60A01 600V, N-CHANNEL MOSFET ORDERING INFORMATION Part Number* Package Top Marking Free Air Temperature (T ) A LN60A01EP PDIP-8 LN60A01E -20C to 85C Part Number** Package Top Marking Free Air Temperature (T ) A LN60A01ES SOIC-8 LN60A01E -20C to 85C *For RoHS compliant packaging, add suffix LF (e.g. LN60A01EPLF) ** For Tape & Reel, add suffix Z (e.g. LN60A01ESZ). For RoHS compliant packaging, add suffix LF (e.g. LN60A01ESLFZ) PACKAGE REFERENCE TOP VIEW TOP VIEW S1 1 8 D1 S1 1 8 D1 S2 2 7 D2 S2 2 7 D2 Gate 3 6 D3 Gate 3 6 D3 S3 4 5 GND S3 4 5 GND PDIP-8 SOIC-8 (1) Recommended Operating Conditions ABSOLUTE MAXIMUM RATINGS Operating Junct. Temp (T )..... 20 C to +125 C J Drain-Source Voltage V .......................... 600V DS (3) Gate-Source Voltage V ..15V GS Thermal Resistance JA JC (1) Continuous Drain Current I .................. 0.08A D SOIC8 ........................................90 ... 45... C/W (2) Pulsed Drain Current I ......................... 0.4A DM PDIP8 ....................................105.. 45C/W (1) (2) Power Dissipation P .......................... 1.3W D Storage Temperature.............. 55 C to +150 C Notes: 1) Surface Mounted on 11 FR4 Board.. 2) Pulse width limited by maximum junction temperature. 3) Measured on JESD51-7, 4-layer PCB LN60A01EP Rev. 0.91 www.MonolithicPower.com 2 1/15/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. 2010 MPS. All Rights Reserved.