LXES03TBB1-141 Murata

Silicon ESD protection device LXESxxT series Document No. C2R1YYS-010F Rev1.3 p1/18 1. Application This specification shall be applied to the ESD Protection Device. LXES03TBB1-141 LXES03TAA1-142 LXES02TAA1-144 LXES02TAA1-145 LXES1UTAA1-157 LXES1UTBB1-157 LXES03TAA1-199 2. Part Number Configuration (e.g.) LXES 1U T AA 1 157 Product ID LXES = ESD Protection device Dimension Code Unit : mm Code Dimension package (serial number) 02 0.4 x 0.2 WL-CSP (144/145) 03 0.6 x 0.3 WL-CSP (141/142/199) 1U 1.0 x 0.6 DFN (157) Type(T:Silicon ESD) Control Code Number of channel Serial Number RoHS Directive compliant product MURATA MFG. CO., LTD. p2/18 3. CHARACTERISTICS 3-1 Ratings Operating Storage Parameter Package Temperature Temperature Symbol T T OP STO 0 0 Unit C C LXES03TBB1-141 -40 to +85 -40 to +125 LXES03TAA1-142 -40 to +85 -40 to +125 WL-CSP LXES02TAA1-144 -40 to +85 -40 to +125 LXES02TAA1-145 -40 to +85 -40 to +125 LXES1UTAA1-157 DFN -40 to +85 -40 to +125 LXES1UTBB1-157 LXES03TAA1-199 WL-CSP -40 to +85 -40 to +125 3-2 Electrical Characteristics (T=25 ) Reverse Channel Break ESD per IEC ESD per IEC ESD per IEC Parameter Stand-off Leakage down 61000-4-2 61000-4-2 61000-4-5 (Surge) Capacitance Voltage Current voltage (air) (contact) (8/20s) Symbol V I V V V I C RWM leak br esd esd pp Unit V nA V kV kV A pF VP =5V, I =1mA, VP =0V, f = 1MHz, in1 br in1,2 Condition Ta=25 Ta=25 VP =0V P to P Between Channel pins in2 in1 in2 LXES03TBB1-141 +/-5.5 50 (max) 7(min) +/- 25 +/- 8 1.5 0.45 LXES03TAA1-142 +/-5.5 50 (max) 7(min) +/- 15 +/- 8 3 5 LXES02TAA1-144 +/-5.5 50 (max) 7(min) +/- 15 +/- 8 3 5 LXES02TAA1-145 +/-5.5 50 (max) 7(min) +/- 15 +/- 8 1 0.35 Reverse Channel Break ESD per IEC ESD per IEC ESD per IEC Parameter Stand-off Leakage down 61000-4-2 61000-4-2 61000-4-5 (Surge) Capacitance Voltage Current voltage (air) (contact) (8/20s) Symbol V I V V V I C RWM leak br esd esd pp Unit V uA V kV kV A pF VP =5V, I =1mA, VP =0V, f = 1MHz, in1 br in1,2 Condition Ta=25 Ta=25 VP =0V P to P Between Channel pins in2 in1 in2 LXES1UTAA1-157 +/-6.0 1.0 (max) 7 (min) +/- 15 +/- 8 1.5 0.5 LXES1UTBB1-157 Reverse Channel Break ESD per IEC ESD per IEC ESD per IEC Parameter Stand-off Leakage down 61000-4-2 61000-4-2 61000-4-5 (Surge) Capacitance Voltage Current voltage (air) (contact) (8/20s) Symbol V I V V V I C RWM leak br esd esd pp Unit V nA V kV kV A pF VP =5.5V, I =1mA, VP =0V, f = 1MHz, in1 br in1,2 Condition Ta=25 Ta=25 VP =0V P to P Between Channel pins in2 in1 in2 LXES03TAA1-199 +/-5.5 100 (max) 7 (min) +/- 30 +/- 30 1.5 1.0 MURATA MFG. CO., LTD.