RO3134A Murata

RO3134A electronic component of Murata
RO3134A Murata
RO3134A Resonators
RO3134A  Passive Components
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X-On Electronics has gained recognition as a prominent supplier of RO3134A Resonators across the USA, India, Europe, Australia, and various other global locations. RO3134A Resonators are a product manufactured by Murata. We provide cost-effective solutions for Resonators, ensuring timely deliveries around the world.

Part No.RO3134A
Manufacturer:Murata
Category:Resonators
Description:Resonators 372.50MHz +/-100kHz Single Port
Datasheet:RO3134A Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1323
10$ 1.5702
50$ 1.47
100$ 1.33
500$ 1.1509
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the RO3134A from our Resonators category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RO3134A and other electronic components in the Resonators category and beyond.

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RO3134A Very Low Series Resistance Quartz Stability Surface-mount Ceramic Case 372.5 MHz Complies with Directive 2002/95/EC (RoHS) Pb SAW The RO3134A is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case. Resonator It provides reliable, fundamental-mode, quartz frequency stabilization of local oscillators operating at approximately 372.5 MHz. Absolute Maximum Ratings Rating Value Units CW RF Power Dissipation (See Typical Test Circuit) +10 dBm DC Voltage Between Terminals (Observe ESD Precautions) 30 VDC Case Temperature -40 to +85 C Soldering Temperature (10 seconds / 5 cycles maximum) 260 C SM5035-4 Electrical Characteristics Characteristic Sym Notes Minimum Typical Maximum Units f Frequency, +25 C Nominal Frequency 372.400 372.600 MHz C 2, 3, 4, 5 f Tolerance from 372.500 MHz 100 kHz C Insertion Loss IL 2, 5, 6 1.0 2.2 dB Q Quality Factor Unloaded Q 15,400 U 5, 6, 7 Q 50 Loaded Q 1,700 L T Temperature Stability Turnover Temperature 10 25 40 C O f f Turnover Frequency 6, 7, 8 O C 2 Frequency Temperature Coefficient FTC 0.032 ppm/C f Frequency Aging Absolute Value during the First Year 1, 6 10 ppm/yr A DC Insulation Resistance between Any Two Terminals 5 1.0 M R RF Equivalent RLC Model Motional Resistance 12.7 M Motional Inductance L 5, 6, 7, 9 83 H M Motional Capacitance C 2.2 fF M Shunt Static Capacitance C 5, 6, 9 2.4 pF O Test Fixture Shunt Inductance L 2, 7 76 nH TEST Lid Symbolization 836//YYWWSR CAUTION: Electrostatic Sensitive Device. Observe precautions for handling. Notes: 1. Frequency aging is the change in f with time and is specified at +65 are subject to change without notice. C 7. Derived mathematically from one or more of the following directly C or less. Aging may exceed the specification for prolonged tempera- tures above +65 C. Typically, aging is greatest the first year after measured parameters: f , IL, 3 dB bandwidth, f versus T , and C . C C C O manufacture, decreasing in subsequent years. 8. Turnover temperature, T , is the temperature of maximum (or O 2. The center frequency, f , is measured at the minimum insertion loss C turnover) frequency, f . The nominal frequency at any case O point, IL , with the resonator in the 50 test system (VSWR MIN 2 temperature, T , may be calculated from: f = f 1 - FTC (T -T ) . C O O C 1.2:1). The shunt inductance, L , is tuned for parallel resonance TEST Typically oscillator T is approximately equal to the specified O with C at f . Typically, f or f is approximately O C OSCILLATOR TRANSMITTER resonator T . O equal to the resonator f . C 9. This equivalent RLC model approximates resonator performance near 3. One or more of the following United States patents apply: 4,454,488 the resonant frequency and is provided for reference only. The and 4,616,197. capacitance C is the static (nonmotional) capacitance between the O 4. Typically, equipment utilizing this device requires emissions testing two terminals measured at low frequency (10 MHz) with a capacitance and government approval, which is the responsibility of the equipment meter. The measurement includes parasitic capacitance withNC manufacturer. pads unconnected. Case parasitic capacitance is approximately 5. Unless noted otherwise, case temperature T = +25 2 C. C 0.05 pF. Transducer parallel capacitance can by calculated as: 6. The design, manufacturing process, and specifications of this device C C -0.05pF. P O www.RFM.com E-mail: info rfm.com Page 1 of 2 2008-2011 by RF Monolithics, Inc. RO3134A - 6/29/11Electrical Connections Equivalent Model The SAW resonator is bidirectional and may be Terminal 0.05 pF* installed with either orientation. The two terminals C = C + p 0.05 pF are interchangeable and unnumbered. The callout o C p NC indicates no internal connection. The NC pads *Case Parasitics assist with mechanical positioning and stability. External grounding of the NC pads is Terminal Lm Cm Rm recommended to help reduce parasitic capacitance in the circuit. Temperature Characteristics The curve shown on the right f = f , T = T Typical Test Circuit C O C O accounts for resonator 0 0 The test circuit inductor, L , is tuned to resonate with the static TEST -50 contribution only and does not -50 capacitance, C , at F . O C include LC component -100 -100 temperature contributions. -150 -150 -200 -200 ELECTRICAL TEST -80 -60 -40 -20 0 +20 +40 +60 +80 Case T = T - T ( C ) C O From 50 To 50 Network Analyzer Network Analyzer POWER TEST P INCIDENT Terminal Low-Loss 50 Source Matching NC NC P at F Network to REFLECTED C 50 Terminal P P CW RF Power Dissipation = INCIDENT - REFLECTED Typical Application Circuits Typical Low-Power Transmitter Application +9VDC 200k Modulation 47 Input C1 L1 (Antenna) PCB Land Pattern Top View C2 RF Bypass RO3XXXA Millimeters Inches Bottom View Dimensions Min Nom Max Min Nom Max 470 A 4.87 5.00 5.13 0.191 0.196 0.201 B 3.37 3.50 3.63 0.132 0.137 0.142 Typical Local Oscillator Applications C 1.45 1.53 1.60 0.057 0.060 0.062 D 1.35 1.43 1.50 0.040 0.057 0.059 Output E 0.67 0.80 0.93 0.026 0.031 0.036 +VDC F 0.37 0.50 0.63 0.014 0.019 0.024 C1 +VDC G 1.07 1.20 1.33 0.042 0.047 0.052 L1 H - 1.04 - - 0.041 - I - 1.46 - - 0.058 - C2 J - 0.50 - - 0.019 - RO3XXXA RF Bypass K - 1.05 - - 0.041 - Bottom View L - 1.44 - - 0.057 - M - 0.71 - - 0.028 - www.RFM.com E-mail: info rfm.com Page 2 of 2 2008-2011 by RF Monolithics, Inc. RO3134A - 6/29/11 (ppm) (f-f ) f o / o Case Ground Case Ground

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