Product Information

NP2301BVR-G

NP2301BVR-G electronic component of NATLINEAR

Datasheet
20V 2.4A 1W 86mΩ@4.5V,2A 700mV@250uA 37pF@10V P Channel 325pF@10V 3.2nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS

Manufacturer: NATLINEAR
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0288 ea
Line Total: USD 0.58

1261 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
38 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20

Stock Image

NP2301BVR-G
NATLINEAR

20 : USD 0.0311
200 : USD 0.0253
600 : USD 0.022
3000 : USD 0.0196
9000 : USD 0.018
21000 : USD 0.017

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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The NP2301BVR-G is a type of N-channel, Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Natlinear. It features a 20V drain-source voltage (VDS), a 2.4A continuous drain current (ID), a 1W power dissipation, an approximately 86mO on-resistance at 4.5V gate-source voltage (VGS), a 2A / 700mV P-channel of threshold voltage (VTP), and a 37pF input capacitance at 10V. The device also features a 325pF output capacitance at 10V, a 3.2nC reverse transfer capacitance at 4.5V gate-source voltage, and has an operating temperature range between -55? and 150? (Tj). The NP2301BVR-G MOSFET is laid out in a SOT-23 package and complies with the Restriction of Hazardous Substances (RoHS) Directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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