NP55N04D6 NATLINEAR

NP55N04D6 electronic component of NATLINEAR
NP55N04D6 NATLINEAR
NP55N04D6 MOSFETs
NP55N04D6  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NP55N04D6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NP55N04D6 MOSFETs are a product manufactured by NATLINEAR. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NP55N04D6
Manufacturer: NATLINEAR
Category: MOSFETs
Description: PDFN5x6-8L-A MOSFETs ROHS
Datasheet: NP55N04D6 Datasheet (PDF)
Price (USD)
5: USD 0.243 ea
Line Total: USD 1.21 
Availability : 5553
  
Ship by Mon. 01 Sep to Thu. 04 Sep
QtyUnit Price
5$ 0.243
50$ 0.212
150$ 0.1488
500$ 0.1227
2500$ 0.1116
5000$ 0.1087

Availability 5553
Ship by Mon. 01 Sep to Thu. 04 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.243
50$ 0.212
150$ 0.1488
500$ 0.1227
2500$ 0.1116
5000$ 0.1087

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NP55N04D6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NP55N04D6 and other electronic components in the MOSFETs category and beyond.

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The NP55N04D6 with PDFN5x6-8L-A MOSFET manufactured by NATLINEAR is a surface mount packages of five N-channel enhancement mode power field effect transistors. It is RoHS compliant and is designed for use at low voltage using drain-source breakdown voltages of 55V and gate-source threshold voltages of 4V. This MOSFET is made for use in a wide range of power distribution and switching such as driving loads like motors and solenoids, or in power regulators and voltage ramps. It has low on-state resistance, high input capacitance, moderate bandwidth, and low capacitance. Its drain-source voltage is rated for up to 55V and can handle up to 6A. It also has a gate-source threshold voltage of 4V, meaning it can achieve fast switching times with a minimal amount of gate drive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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